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EDX5116ABSE-3B-E - 512M bits XDR DRAM (32M words 16 bits) 32M X 16 RAMBUS, PBGA104

EDX5116ABSE-3B-E_1081488.PDF Datasheet


 Full text search : 512M bits XDR DRAM (32M words 16 bits) 32M X 16 RAMBUS, PBGA104
 Product Description search : 512M bits XDR DRAM (32M words 16 bits) 32M X 16 RAMBUS, PBGA104


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PART Description Maker
EDX5116ACSE-4C-E EDX5116ACSE-3A-E EDX5116ACSE-3B-E 512M bits XDR DRAM
512M bits XDR?/a> DRAM
Elpida Memory
EDS6416AHBH-75-E EDS6416CHBH-75-E 64M bits SDRAM (4M words x 16 bits) 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位)
Elpida Memory, Inc.
EDD2508AKTA-5C EDD2508AKTA-5 EDD2508AKTA-5B 256M bits DDR SDRAM (32M words x 8 bits, DDR400)
ELPIDA[Elpida Memory]
EDD2508AKTA-5-E 256M bits DDR SDRAM (32M words x 8 bits DDR400)
Elpida Memory
EDS2532JEBH-75-E 256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
Elpida Memory, Inc.
LC35256FM LC35256FM-70U FT-55U FT-70U LC35256FT-70 Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
256K (32768 words 8 bits) SRAM Control Pins: NOT OE and NOT CE
256K (32768 words x 8 bits) SRAM Control Pins: Not OE and Not CE
256K (32768 words X 8 bits) SRAM Control Pins: OE and CE
256K (32768 words 8 bits) SRAM Control Pins: OE and CE
SRAM,32KX8,CMOS,SOP,28PIN,PLASTIC
From old datasheet system
Intersil
Sanyo Semiconductor Corp
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
EDE5132BABG-6G-F 512M bits DDR2 SDRAM
16M X 32 DDR DRAM, 0.45 ns, PBGA128
ELPIDA MEMORY INC
LC321667BJ LC321667BM LC321667BT-70 LC321667BT-80 1 MEG (65536 words X 16 bits) DRAM EDO Page Mode / Byte Write
1 MEG (65536 words X 16 bits) DRAM EDO Page Mode, Byte Write???
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
EDE2108ABSE EDE2108ABSE-5C-E EDE2108ABSE-6E-E EDE2 2G bits DDR2 SDRAM 512M X 4 DDR DRAM, 0.45 ns, PBGA68
2G bits DDR2 SDRAM 256M X 8 DDR DRAM, 0.4 ns, PBGA68
ELPIDA MEMORY INC
Elpida Memory, Inc.
EDS1232AASE-75-E EDS1232AASE-75L-E EDS1232AASE-60L ER 2C 2#8 SKT RECP LINE
Circular Connector; No. of Contacts:6; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Cable Receptacle; Insert Arrangement:20-17 RoHS Compliant: No
ER 6C 3#16 3#8 SKT RECP 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
128M bits SDRAM (4M words x 32 bits) 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
Elpida Memory, Inc.
IS42S16100C1-6T IS42S16100C1-5T IS42S16100C1-5TL I 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
Integrated Silicon Solution, Inc.
天津新技术产业园区管理委员会
 
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EDX5116ABSE-3B-E Iconline EDX5116ABSE-3B-E battery mcu EDX5116ABSE-3B-E Stmicroelectronic EDX5116ABSE-3B-E Timer EDX5116ABSE-3B-E Signal
 

 

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