| PART |
Description |
Maker |
| EDX5116ABSE-4C-E EDX5116ABSE EDX5116ABSE-2A-E EDX5 |
512M bits XDR DRAM (32M words x16 bits)
|
ELPIDA[Elpida Memory]
|
| EDX5116ADSE-3A-E EDX5116ADSE-3B-E EDX5116ADSE-3C-E |
512M bits XDR DRAM
512M bits XDR?/a> DRAM
|
Elpida Memory
|
| EDD2508AKTA-5B-E EDD2508AKTA-5C-E EDD2508AKTA-5-E |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
Elpida Memory, Inc.
|
| EDS2532EEBH-75-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Elpida Memory, Inc.
|
| EDS2532JEBH-75-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
|
Elpida Memory, Inc.
|
| EDS2532EEBH-9A EDS2532EEBH-9A-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
|
Elpida Memory, Inc.
|
| EDS2732CABH-1A-E EDS2732CABH-1AL-E EDS2732CABH-75L |
256M bits SDRAM (8M words x 32 bits)
GT 25C 25#12 SKT PLUG 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
71-580540-35S
71-580584-05P
|
http://
ELPIDA MEMORY INC
Elpida Memory, Inc.
|
| EDX5116ADSE-4D-E EDX5116ADSE-3C-E EDX5116ADSE-3B-E |
512M bits XDR⑩ DRAM
|
Elpida Memory
|
| K9F4G08U0M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory 512M x 8 1克8位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
| K4C89323AF-GCFB K4C89323AF-TCF6 K4C89323AF-TCF5 K4 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| LC322271J LC322271T-70 LC322271T-80 LC322271M |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode / Byte Write
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
SANYO[Sanyo Semicon Device]
|
