| PART |
Description |
Maker |
| 2N7002BKW |
60 V, 310 mA N-channel Trench MOSFET 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
NXP Semiconductors N.V.
|
| NX6311EH NX6311EH-AZ |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION
|
California Eastern Labs
|
| FDMC7570S |
25V N-Channel Power Trench® SyncFET™; 8-Power-33; Tape and Reel
N-Channel Power Trench垄莽 SyncFET 25 V, 40 A, 2 m楼?
N-Channel Power Trench? SyncFET 25 V, 40 A, 2 mΩ
|
FAIRCHILD SEMICONDUCTOR CORP
|
| NX2301P |
20 V, 2 A P-channel Trench MOSFET Trench MOSFET technology Relay driver
|
TY Semiconductor Co., L...
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| FDS2572 FDS2572NL |
150V N-Channel UltraFET Trench MOSFET
150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| ISL9N306AD ISL9N306AD3 ISL9N306AD3ST |
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mз 50 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V 50A 6m
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6m?/a>
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FDA2712 |
N-Channel UltraFET Trench MOSFET 250V, 64A, 34mOhms
N-Channel UltraFET Trench MOSFET 250V, 64A, 34mΩ
|
Fairchild Semiconductor
|
| RO3053A-1 |
310.0 MHz SAW Resonator
|
Murata Manufacturing Co...
|
| SR310 |
310.00 MHz One-Port SAW Resonator
|
http://
|
| PAK-I |
310 Ivy Glen Court
|
Electronic Theatre Controls, Inc.
|
| PAK-II |
310 Ivy Glen Court
|
Electronic Theatre Controls, Inc.
|
