| PART |
Description |
Maker |
| 82-121-74011-G8704 82-121-74016-G8706 82-121-74017 |
DICHTUNG RECHTWINKLIG 9.5X6.4MM 1M
DICHTUNG QUADRATISCH 5.1X5.1MM 1M
DICHTUNG RECHTWINKLIG 4.8X3.3MM 1M
DICHTUNG D FORM 2.3X2.3MM 1M
DICHTUNG D FORM 6.4X3.6MM 1M
DICHTUNG QUADRATISCH 9.5X9.5MM 1M
DICHTUNG V FORM 10.7X9.8MM 1M
DICHTUNG RECHTWINKLIG 12.7X9.5MM 1M
DICHTUNG V FORM 14.7X17.1MM 1M
DICHTUNG D FORM 9.5X6.4MM 1M 诗D9.5X6.4MM 100
DICHTUNG QUADRATISCH 6.0X6.0MM 1M 诗QUADRATISCH 6.0X6.0MM 100
|
Cirrus Logic, Inc.
TE Connectivity, Ltd.
|
| AON6426 AON6426L |
DFN 5X6 PACKAGE MARKING DESCRIPTION
|
Alpha & Omega Semiconductors
Alpha & Omega Semicondu...
|
| AON6260 AON6260L |
DFN 5X6 PACKAGE MARKING DESCRIPTION
|
Alpha & Omega Semiconductors
|
| STL75N8LF6 |
N-channel 80 V, 5.6 mOhm, 18 A, PowerFLAT(TM) 5x6 STripFET(TM) VI DeepGATE(TM) Power MOSFET
|
ST Microelectronics
|
| STL15DN4F5 |
Dual N-channel 40 V, 8 mΩ, 15 A PowerFLAT?5x6) double island, STripFET V Power MOSFET
|
STMicroelectronics
|
| IRFH7110 |
100V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6 package
|
International Rectifier
|
| 50-00033 |
Connector, mono jack, 2.5x6.0xL20.8 mm, brass, nickel plated, molding style
|
Tensility International...
|
| STL110NS3LLH7 |
N-channel 30 V, 0.0027 Ohm typ., 28 A STripFET(TM) VII DeepGATE(TM) Power MOSFETs plus monolithic Schottky in a PowerFLAT(TM) 5x6
|
ST Microelectronics
|
| 0475860001 |
Camera Socket for Mobile Phone, Top Mount, Side Contact, 6.5x6.5 Camera Module
|
Molex Electronics Ltd.
|
| 78499-0001 |
Camera Socket for Mobile Phone, SMT, Bottom Contact, 6.5x6.5 Camera Module, with Pick-and-Place Cap
|
Molex Electronics Ltd.
|
| NTMFS4122N NTMFS4122NT1G NTMFS4122NT3G |
Power MOSFET 30 V, 23 A, Single N-Channel SO-8 Flat Lead; Package: SO8FL / DFN6 5x6, 1.27P; No of Pins: 6; Container: Tape and Reel; Qty per Container: 5000
Power MOSFET 30 V, 23 A, Single N-Channel, SO-8 Flat Lead
Power MOSFET 30 V, 23 A, Single N-Channel SO-8 Flat Lead; Package: SO8FL / DFN6 5x6, 1.27P; No of Pins: 6; Container: Tape and Reel; Qty per Container: 1500 9100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ON Semiconductor
|
