| PART |
Description |
Maker |
| HM62W4100H HM62W4100HJP-12 HM62W4100HJP-15 HM62W41 |
4M High Speed SRAM (1-Mword x 4-bit)
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| HM621400H HM621400HJP-10 HM621400HJP-12 HM621400HJ |
4M High Speed SRAM (4-Mword x 1-bit)
|
Hitachi Semiconductor
|
| HM62W1400H |
4M High Speed SRAM (4-Mword ×1-bit)(4M高速静态RAM(4M×1)
|
Hitachi,Ltd.
|
| R1LV1616HSA-4LI R1LV1616HSA-4SI R1LV1616H-I R1LV16 |
Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit / 2-Mword × 8-bit)
|
Renesas Electronics Corporation
|
| HM62A16100I HM62A16100LBPI-7 HM62A16100LBPI-7SL |
Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit)
Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)
Memory>Low Power SRAM
|
Renesas Electronics Corporation
|
| HM62V16100I HM62V16100LBPI-4 HM62V16100LBPI-4SL HM |
Memory>Low Power SRAM
Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)
|
HITACHI[Hitachi Semiconductor]
Renesas Electronics Corporation
|
| IC61LV12816 IC61LV12816-8TI IC61LV12816-10B IC61LV |
128K x 16 Hight Speed SRAM with 3.3V 128K的16 Hight高速SRAM.3V
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Toshiba, Corp.
Linear Technology, Corp.
Electronic Theatre Controls, Inc.
ICSI[Integrated Circuit Solution Inc]
|
| R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| IC61LV256- IC61LV256 IC61LV256-15TG IC61LV256-8TIG |
32K x 8 Hight Speed SRAM with 3.3V
32K x 8 Hight Speed SRAM with 3.3V 32K的8 Hight高速SRAM.3V
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Integrated Circuit Solu...
Ecliptek, Corp.
ICSI[Integrated Circuit Solution Inc]
|
| AS7C1025B AS7C1025B-20TJIN AS7C1025B-10JC AS7C1025 |
128 x 64 pixel format, LED or EL Backlight available 128K X 8 STANDARD SRAM, 20 ns, PDSO32
High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125 128K X 8 STANDARD SRAM, 12 ns, PDSO32
5V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 20 ns, PDSO32
5V 128K X 8 CMOS SRAM (Center power and ground) 128K X 8 STANDARD SRAM, 15 ns, PDSO32
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-PDIP -55 to 125
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125
SRAM - 5V Fast Asynchronous
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| R1RW0416DSB-2PI R1RW0416DGE-2PI R1RW0416DI |
Memory>Fast SRAM>Asynchronous SRAM
Wide Temperature Range Version 4M High Speed SRAM (256-kword 】 16-bit)
Wide Temperature Range Version 4M High Speed SRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
