| PART |
Description |
Maker |
| AK5322048BW |
1,048,576 Word by 36 Bit CMOS Dynamic Random Access Memory 1,048,576 Word6位CMOS动态随机存取存储器
|
Accutek Microcircuit, Corp.
|
| AK5321024BW |
1,048,576 Word by 32 Bit CMOS Dynamic Random Access Memory 1,048,576 Word2位CMOS动态随机存取存储器
|
Accutek Microcircuit, Corp.
|
| AM29LV800B-100 AM29LV800B-150 AM29LV800B-90R AM29L |
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory
|
Advanced Micro Devices
|
| GM71C18163CL-6 GM71C18163C GM71C18163CL-5 GM71C181 |
1,048,576 words x 16 bit CMOS DRAM, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
HYNIX[Hynix Semiconductor]
|
| MSM538001E MSM538001E-XXGS-K MSM538001E-XXRS |
1,048,576字8位MASKROM
From old datasheet system
1,048,576-Word x 8-Bit MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSM51V4400E MSM51V4400E-10 MSM51V4400E-70 |
1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 1,048,576字4位动态随机存储器：快速页面模式型
|
OKI SEMICONDUCTOR CO., LTD.
OKI electronic componets
|
| MR27V1602D |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM(1M字6位或2M字位一次性可编程ROM 1,048,576字16位或2097152字8位一次性可编程00万字× 16位或200万字× 8位一次性可编程ROM的字
|
OKI SEMICONDUCTOR CO., LTD.
|
| THM361020S-10 THM361020S-80 THM361020SG-10 THM3610 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1048576 WORDS x 36 BIT DYNAMIC RAM MODULE
1,048,576 WORDS x 36 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 36 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| M6MGB166S4BWG M6MGT166S4BWG M6MGB E99008 |
From old datasheet system
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
16,777,216-BIT (1,048,576 -WORD BY 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
|
Mitsubishi Electric Semiconductor
|
| MSM538001E-XXGS-K MSM538001E-XXRS MSM538001E-XXTS- |
1,048,576-Word x 8-Bit MASKROM
|
OKI electronic componets
|
