PART |
Description |
Maker |
AK5321024BW |
1,048,576 Word by 32 Bit CMOS Dynamic Random Access Memory 1,048,576 Word2位CMOS动态随机存取存储器
|
Accutek Microcircuit, Corp.
|
AM29LV008B AM29LV008B-150 AM29LV008B-90EC AM29LV00 |
8 Megabit (1,048,576 x 8-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
|
http:// Advanced Micro Devices
|
AM29LV008T-90REC |
8 Megabit (1,048,576 x 8-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
|
ADVANCED MICRO DEVICES INC
|
MSM514400E-60SJ MSM514400E-60TS-K MSM514400EL-XXTS |
1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 1,048,576字4位动态随机存储器:快速页面模式型
|
OKI SEMICONDUCTOR CO., LTD. OKI[OKI electronic componets]
|
MSM51V4400E MSM51V4400E-10 MSM51V4400E-70 |
1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 1,048,576字4位动态随机存储器:快速页面模式型
|
OKI SEMICONDUCTOR CO., LTD. OKI electronic componets
|
HM514400B HM514400BL HM514400C HM514400CL HM514400 |
1,048,576-word x 4-bit dynamic random access memory, 80ns 1,048,576-word x 4-bit dynamic random access memory, 60ns 1/048/576-word X 4-bit Dynamic Random Access Memory 1,048,576-word x 4-bit dynamic random access memory, 70ns
|
Hitachi Semiconductor
|
MSM531622F |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit MASKROM(1M字6位或2M字位掩膜ROM 1,048,576字16位或2097152字8位MASKROM00万字× 16位或200万字× 8位掩膜ROM的字 From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
TC514400AAZL-60 TC514400AJL-60 TC514400APL TC51440 |
60 ns, 4-bit generation dynamic RAM 1,048,576 x 4 BIT DYNAMIC RAM 1,048,576 × 4位动态随机存储器
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation Toshiba, Corp.
|
MSM27C1602CZ |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM 1,048,576字16位或2097152字8位一次性可编程
|
OKI electronic components OKI electronic componets OKI SEMICONDUCTOR CO., LTD.
|
MR53V8002J-XXTP MR53V8002J MR53V8002J-XXMA MR53V80 |
524,288-Word x 16-bit or 1,048,576 x 8-Bit MASK ROM
|
OKI[OKI electronic componets]
|