| PART |
Description |
Maker |
| RA03M8087M-101 RA03M8087M RA03M8087M06 |
RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA20H8087M_06 RA20H8087M RA20H8087M-101 RA20H8087M |
RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Sem...
|
| D8740200GTH |
GaAs Power Doubler, 40 - 870MHz, 20.5dB min. Gain @ 870MHz, 440mA max. @ 24VDC
|
http://
PREMIER DEVICES, INC.
|
| D8740150GTH |
GaAs Power Doubler, 40 - 870MHz, 15.5dB min. Gain @ 870MHz, High, 440mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| D8740270GTH |
GaAs Power Doubler, 40 - 870MHz, 27.0dB min. Gain @ 870MHz, High, 440mA max. @ 24VDC
|
http://
PREMIER DEVICES, INC.
|
| D8740250GTH |
GaAs Power Doubler, 40 - 870MHz, 25.0dB min. Gain @ 870MHz, High, 440mA max. @ 24VDC
|
http://
PREMIER DEVICES, INC.
|
| S8740280GT |
GaAs Push Pull Hybrid 40 - 870MHz 28.0dB min. Gain @ 870MHz 260mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| RD07MUS2B RD07MUS2B11 |
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W
|
Mitsubishi Electric Semiconductor
|
| PTVA042502FCV1R0 PTVA042502EC |
Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 ?806 MHz
Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 ?806 MHz
|
Infineon Technologies A...
|
| MPS-080817N-85 |
806 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
MicroWave Technology, Inc.
|
| MPS-080817P-85 |
806 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
MicroWave Technology, Inc.
|
