| PART |
Description |
Maker |
| BCR133S Q62702-C2376 BCR133SQ62702C2376 |
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) NPN硅数字晶体管阵列（开关电路，逆变器，接口电路，驱动电路）
TRANSISTOR DIGITAL SOT363
NPN Silicon Digital Transistor Array (Switching circuit/ inverter/ interface circuit/ driver circuit)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BCR185S |
From old datasheet system
PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)
|
SIEMENS[Siemens Semiconductor Group]
|
| BCR108S Q62702-C2414 |
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| BCR198S Q62702-C2419 |
From old datasheet system
PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)
|
SIEMENS[Siemens Semiconductor Group]
|
| SLA2501M |
3-circuit High-side Power Switch Array
|
SANKEN[Sanken electric]
|
| PE84140_06 84140-00 84140-01 84140-02 PE84140 PE84 |
Ultra-High Linearity Broadband Quad MOSFET Array 0 MHz - RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array
|
Peregrine Semiconductor, Corp.
PEREGRINE[Peregrine Semiconductor Corp.]
|
| MRF9002NR2 |
RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET
|
Freescale Semiconductor, Inc
|
| MRF9002NR2 |
RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET RF功率场效应晶体管阵列N沟道增强型MOSFET的侧
|
飞思卡尔半导体(中国)有限公司
|
| LT505-T |
DC, AC, poulsed.. with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit)
|
LEM[LEM]
|
| C911805 |
Driver circuit for photodiode array with amplifier
|
Hamamatsu Corporation
|
