| PART |
Description |
Maker |
| AS185-92 |
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80%
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC-2 GHz
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC GHz
|
Alpha Industries, Inc.
Alpha Industries Inc
|
| AS200-313 |
As200-313:PHEMT GAAS ic 2 W High Linearity 5 6
|
Skyworks
|
| AS217-000 |
PHEMT GaAs IC High Linearity 3 V T/R SPDT Switch 0.1-2.5 GHz
|
SKYWORKS[Skyworks Solutions Inc.]
|
| RC0402FR-07220RL MMG20271HT1 GRM155R61A104K01D GJM |
Enhancement Mode pHEMT Technology (E-pHEMT) High Linearity Amplifier
|
Freescale Semiconductor, Inc
|
| AS219-321 |
AS219-321:PHEMT GaAs IC High Linearity 3 V T/R SP3|DC-6 GHz Plastic Packaged and Chip|SPST AS219 - 321：PHEMT的砷化镓集成电路高线3室SP3的|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
|
Alpha Industries, Inc.
|
| FPD750SOT343CE EB750SOT343-AH EB750SOT343-BA EB750 |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
Filtronic Compound Semiconductors
|
| FPD2250SOT89 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| RFCA3828TR13 RFCA3828PCK-410 RFCA3828SQ RFCA3828SR |
75Ω High Linearity pHEMT MMIC Amplifier
|
RF Micro Devices
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| FPD1500SOT89CE FPD1500SOT89 EB1500SOT89E-BG EB1500 |
Si, N-CHANNEL, RF POWER, HEMFET
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
RF MICRO DEVICES INC
Filtronic Compound Semiconductors
|
| LP1500SOT223 LP1500SOT2231 LP1500SOT2232 LP1500SOT |
IC MOSFET DRIVER LS 8A SGL 8SOIC
IC MOSFET DRIVER LS 8A SGL 8-DIP
IC MOSFET DRVR LS 8A SGL 5TO-263
IC MOSFET DRVR LS 8A SGL 5TO-220
Low Noise/ High Linearity Packaged PHEMT
Low Noise, High Linearity Packaged PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
