| PART |
Description |
Maker |
| FM22LD16-55-BG FM22LD16-55-BGTR |
4Mbit F-RAM Memory
|
Cypress Semiconductor
|
| M76DW52003TA90ZT M76DW52003BA M76DW52003BA70ZT M76 |
SPECIALTY MEMORY CIRCUIT, PBGA73
32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36W416TG85ZA1T M36W416TG70ZA6T M36W416TG-ZAT M36W |
16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product
CANMS3470L16-23PL/C 16兆x16插槽，开机区块快闪记忆体Mbit的SRAM56Kb x16，内存产品多
|
意法半导
STMicroelectronics N.V.
|
| UN1231 UN1231A |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V
Silicon NPN epitaxial planer transistor
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| ES29BDS160DT-90RTGI ES29BDS160ET-90RTGI ES29BDS320 |
4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
|
优先(苏州)半导体有限公
|
| MB84VA2000-10 MB84VA2001-10 MB84VA2000 |
(MB84VA2000 / MB84VA2001) 8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM
8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA48
|
Fujitsu Media Devices
Fujitsu, Ltd.
Fujitsu Component Limited.
|
| ST16CF54LEVELB |
4Mbit (512Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory(4M位低压单电源闪速存储器)
|
意法半导
|
| LH28F004SU LH28F400SU |
4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory Mb12Kbit × 856千位× 16V单电压闪
|
Sharp Corporation
Sharp, Corp.
|
| M28W431 |
4Mbit (512Kb x8, Boot Block) Low Voltage Flash Memory(4Mb低压闪速存储器) Mb12KB的8，启动块）低压快闪记忆体Mb的低压闪速存储器
|
意法半导
Glenair, Inc.
|
| MB84VA2100 MB84VA2101-10 MB84VA2101 MB84VA2100-10 |
MCP (Multi-Chip Package) FLASH MEMORY & SRAM 16M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM
(MB84VA2100 / MB84VA2101) 16M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
