PART |
Description |
Maker |
AM29LV002 AM29LV002B-90RECB AM29LV002B-120FCB AM29 |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only/ Boot Sector Flash Memory Half Bridge Driver, LO Out of Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-pin DIP package 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位56亩8位).0伏的CMOS只,引导扇区闪存 Connector 连接 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 100 ns, PDSO40 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO40 MB 18C 18#20 PIN RECP 256K X 8 FLASH 3V PROM, 120 ns, PDSO40 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位256亩8位).0伏的CMOS只,引导扇区闪存 256K X 8 FLASH 3V PROM, 90 ns, PDSO40
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AMD Advanced Micro Devices, Inc. SPANSION LLC ADVANCED MICRO DEVICES INC
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AM29DL400BT-120FC AM29DL400BT-80FCB AM29DL400BT-90 |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 80 ns, PDSO44 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO44 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 4兆位12亩x 8-Bit/256亩x 16位).0伏的CMOS只,同时作业快闪记忆 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 70 ns, PDSO44 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO44 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 80 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 70 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 120 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 80 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 90 ns, PDSO44 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 90 ns, PDSO44 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 90 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 90 ns, PDSO48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 120 ns, PDSO44
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http:// ADVANCED MICRO DEVICES INC Advanced Micro Devices, Inc.
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AM27S23 AM27S23_B2A AM27S23_BRA AM27S23_BSA AM27S2 |
DIODE ZENER SINGLE 500mW 20Vz 6.2mA-Izt 0.05 0.1uA-Ir 15 SOD-123 3K/REEL 256 X 8 OTPROM, 40 ns, CDIP20 DIODE ZENER SINGLE 200mW 20Vz 6.2mA-Izt 0.05 0.1uA-Ir 15 SOD-323 3K/REEL 256 X 8 OTPROM, 40 ns, CDFP20 2048-BIT (256X8) BIPOLAR PROM 256 X 8 OTPROM, 45 ns, CQCC20 JT 28C 26#20 2#16 PIN PLUG
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Advanced Micro Devices, Inc. AMD[Advanced Micro Devices]
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24LC22A 24LC22A-I/P 24LC22A-I/SN 24LC22AT-I/SN |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS 2K VESA E - EDID SERIAL EEPROM The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications requiring storage and serial transmission of configuration and control information. Two modes of o The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ...
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Microchip Technology, Inc. Microchip Technology Inc. MICROCHIP[Microchip Technology]
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28F256 AM28F256-150FCB AM28F256-120FE AM28F256-120 |
Octal bus transceivers 20-SOIC 0 to 70 Serial-out shift registers with input latches 16-SOIC 0 to 70 Octal bus transceivers 20-PDIP 0 to 70 Serial-out shift registers with input latches 16-PDIP 0 to 70 Voltage-controlled oscillator 14-SOIC 0 to 70 Serial-out shift registers with input latches 16-SO 0 to 70 Shift registers with input latches 20-SOIC 0 to 70 Dual voltage-controlled oscillators 16-SOIC 0 to 70 Dual voltage-controlled oscillators 16-PDIP 0 to 70 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 90 ns, PDSO32 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 90 ns, PQCC32 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 70 ns, PDSO32 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 70 ns, PDIP32 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 70 ns, PQCC32 Voltage-controlled oscillator 14-PDIP 0 to 70 32K X 8 FLASH 12V PROM, 150 ns, PDIP32 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 150 ns, PDIP32 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256千比特(32亩8位)的CMOS 12.0伏,整体擦除闪存 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory Voltage-controlled oscillator 14-PDIP 0 to 70 32K X 8 FLASH 12V PROM, 200 ns, PQCC32 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 90 ns, PDIP32 Octal bus transceivers with open collector outputs 20-SOIC 0 to 70
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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S29PL127N65GAWW02 S29PL127N65GAW003 S29PL127N65GAI |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 65 ns, PBGA64 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 256/128/128字节6/8/8 M中的x 16位).0伏的CMOS只同步读/写,页模式闪 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 70 ns, PBGA64 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 70 ns, PBGA84 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
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Spansion, Inc. Spansion Inc. SPANSION LLC
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AM29F002NT-90EE AM29F002NT-70JC AM29F002NT-55EI AM |
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 70 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 55 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 90 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 55 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 70 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 55 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 70 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 120 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 120 ns, PDIP32
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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BR34L02FV-W |
256? bit Electrically Erasable PROM From old datasheet system
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ROHM[Rohm]
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24C16B |
Note:This product is not recommended for new designs. Please consider 24LC16B instead.The 24C16B is an 8K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit with an I2C compatible 2-wire serial
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Microchip
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AM27S35ADC-S AM27S35PC-S AM27S35_BKA AM27S35_BUA A |
(AM27S35) 8192 Bit Bipolar Registered PROM 8-Bit Binary Counters With Input Registers 16-SO 0 to 70 8-Bit Binary Counters With Input Registers 16-SOIC 0 to 70 Serial-in shift registers with output latches 16-SO 0 to 70 8-Bit Binary Counters With Input Registers And 3-State Outputs 20-SOIC 0 to 70 Serial-in shift registers with output registers 16-PDIP 0 to 70 Serial-in shift registers with output registers 16-SOIC 0 to 70 1K X 8 OTPROM, CDFP24 8-Bit Binary Counters With Input Registers 16-PDIP 0 to 70 1K X 8 OTPROM, CDIP24 8,192-Bit (1024x8) Bipolar Registered PROM with Programmable INITIALIZE input 1K X 8 OTPROM, CDIP24 8,192-Bit (1024x8) Bipolar Registered PROM with Programmable INITIALIZE 8,192位(1024x8)双极注册胎膜早破与可编程初始化
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AMD[Advanced Micro Devices] Advanced Micro Devices, Inc.
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IS93C66A-2PI IS93C56A-3ZLA3 IS93C66A-3ZLA3 IS93C56 |
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
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Integrated Silicon Solution, Inc.
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