| PART |
Description |
Maker |
| W27E520S-70 W27E520W-70 W27E520S-90 W27E520W-90 |
64K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond Electronics
|
| ATF16V8B-15PC ATF16V8B ATF16V8B-10PC ATF16V8B/BQ/B |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
ATF16V8B/BQ/BQL [Updated 4/01. 19 Pages] 250 gate electrically erasable PLD. 20 pins
From old datasheet system
250 gate electrically erasable PLD, 20 pins
|
Atmel, Corp.
Atmel Corp
|
| PEEL18CV8P-10 PEEL18CV8P-15 PEEL18CV8P-25 PEEL18CV |
CMOS Programmable Electrically Erasable Logic Device 的CMOS电可擦除可编程逻辑器件
CMOS Programmable Electrically Erasable Logic Device CMOS电可擦除可编程逻辑器件
GBASE 350 C5E PNK STRANDED BLK 500FT
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
International CMOS Technology
|
| BR24L02-W BR24L02F-W BR24L02FJ-W BR24L02FV-W BR24L |
256x8 bit electrically erasable PROM 256x8位电可擦除可编程ROM
256×8 bit electrically erasable PROM
256?8 bit electrically erasable PROM
|
Rohm Co., Ltd.
Rohm CO.,LTD.
|
| IS93C46D IS93C46D-2ZI IS93C46D-2GI IS93C46D-2GLI I |
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
1-KBIT SERIAL ELECTRICALLY ERASABLE PROM 1千位的电可擦除可编程ROM
|
Integrated Silicon Solution, Inc.
|
| BR24L64F-W BR24L64-W1 |
8k】8 bit electrically erasable PROM
8k隆驴8 bit electrically erasable PROM
|
Rohm
|
| 24LC32AX 24AA32A 24LC32AT-I_SM 24LC32AT-I_SMG 24LC |
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I<SUP>2</SUP>C™ compatible 2-wire serial ...
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C™ compatible 2-wire serial interface bus. The 24AA32A features a page-write capability of up to 32 bytes of data and is capable of both r
32K I2C Serial EEPROM
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C™ compatible 2-wire serial ...
32KIC Serial EEPROM
32K 1.8V I2C Serial EEPROM
|
MICROCHIP[Microchip Technology]
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| PALCE29MA16H-35PC |
Electrically-Erasable PLD
|
|
| XLS2864A |
8K x 8 Electrically Erasable PROM
|
Exel Microelectronics
|
| ATF22LV10CQZ-30PC ATF22LV10CQZ-30JI ATF22LV10CQZ-3 |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Atmel, Corp.
|
| PALCE16V8H-15E4/B2A PALCE16V8H-15E4/BRA PALCE16V8H |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Honda Tsushin Kogyo Co., Ltd.
|
