| PART |
Description |
Maker |
| CY7C1351G-133BGC CY7C1351G-133AXC CY7C1351G-133AXI |
4-Mbit (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 8 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1231H CY7C1231H-133AXC CY7C1231H-133AXI |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL⑩ Architecture
|
Cypress Semiconductor
|
| CY7C1351G-100AXC |
4-Mbit (128K x 36) Flow-through SRAM with NoBL(TM) Architecture
|
Cypress
|
| SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| CY7C1347F-166AC CY7C1347F-166AI CY7C1347F-166BGC C |
4-Mbit (128K x 36) Pipelined Sync SRAM 128K X 36 CACHE SRAM, 4 ns, PBGA165
4-Mbit (128K x 36) Pipelined Sync SRAM 128K X 36 CACHE SRAM, 4 ns, PBGA119
4-Mbit (128K x 36) Pipelined Sync SRAM 128K X 36 CACHE SRAM, 3.5 ns, PBGA119
4-Mbit (128K x 36) Pipelined Sync SRAM 128K X 36 CACHE SRAM, 3.5 ns, PQFP100
4-Mbit (128K x 36) Pipelined Sync SRAM 128K X 36 CACHE SRAM, 2.8 ns, PBGA119
4-Mbit (128K x 36) Pipelined Sync SRAM 4兆位28K的36）流水线同步静态存储器
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位（为512k × 36/1M × 18）流体系结构，通过与NoBLTM的SRAM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IS61NF25618-10BI IS61NF25618-8.5TQ IS61NF25618-8.5 |
128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH NO WAIT STATE BUS SRAM
|
Integrated Silicon Solution, Inc
Integrated Silicon Solu...
|
| IDT70V9099L12PF IDT70V9099L12PFI IDT70V9199L9PFI I |
From old datasheet system
128K x 9 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
128K x 8 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
HIGH-SPEED 3.3V 128K x9/x8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM 高.3 128Kx9/x8同步流水线双端口静态RAM
Small Signal Diode 高.3 128Kx9/x8同步流水线双端口静态RAM
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| CY7C1297H-133AXC |
1-Mbit (64K x 18) Flow-Through Sync SRAM; Architecture: Standard Sync, Flow-through; Density: 1 Mb; Organization: 64Kb x 18; Vcc (V): 3.1 to 3.6 V
|
CYPRESS SEMICONDUCTOR CORP
|
| CY62137CV30LL-55BVXI CY62137CV30LL-70BAE CY62137CV |
2-Mbit (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PBGA48
|
Cypress Semiconductor Corp.
|
| CY7C1355C-100AXC CY7C1355C-100BGXC CY7C1355C-133AX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA119
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL??Architecture
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
