| PART |
Description |
Maker |
| IRF533R IRF532R IRF530 IRF530R IRF531 IRF533 IRF53 |
N-Channel Power MOSFETs Avalanche Energy Rated
|
HARRIS[Harris Corporation]
|
| IRF440R IRFP442R IRFP443R IRFP441R |
Avalanche Energy Rated N-Channel Power MOSFETs
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| 71M6531D10 71M6532F-IGTR/F 71M6532D |
Energy Meter IC
1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PQFP100
|
Teridian Semiconductor Corporation
MAXIM INTEGRATED PRODUCTS INC
Teridian Semiconductor ...
|
| IRF5M4905 IRF5M4B905 |
Avalanche Energy Ratings
THRU-HOLE (TO-254AA) 55V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.03ohm, Id=-35A*)
|
International Rectifier
|
| PHP6N60E PHB6N60E |
PowerMOS transistors Avalanche energy rated 5.4 A, 600 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| IRF830 |
PowerMOS transistor Avalanche energy rated 5.9 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| IRF5YZ48CM IRF5YZ48CM-15 |
Avalanche Energy Ratings
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.029ohm, Id=18A*)
55V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
|
IRF[International Rectifier]
|
| EM24DIN |
Energy Management Energy Analyzer Type EM24 DIN
|
List of Unclassifed Manufacturers
|
| MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
|
| MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 4.0 AMPERES 800 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
