| PART |
Description |
Maker |
| DL-3147-041 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
SANYO
|
| HL6322G HL6321G |
AlGaInP Laser Diodes
|
OPNEXT[Opnext. Inc.]
|
| HL6724MG |
AlGaInP Laser Diode
|
OPNEXT[Opnext. Inc.]
|
| HL6713G |
AlGaInP Laser Diode(AlGalnP激光二极管)
|
Hitachi,Ltd.
|
| HL6712G |
From old datasheet system
0.67 um band AlGaInP index-guided laser diode with a double heterostructure
|
Hitachi Semiconductor
|
| ADL-65075TA2 |
General purpose red laser light source Laser pointer lndustrial laser markers measuring instruments
|
Roithner LaserTechnik GmbH
|
| ML725AA11F ML725B11F ML725J11F ML720L11S ML720AA11 |
1310 nm, LASER DIODE
MITSUBISHI LASER DIODES InGaAsP DFB LASER DIODES 三菱激光二极管InGaAsP的DFB激光器
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| ML9XX22 ML9SM11 ML9SM11-02 ML9SM11-03 ML9SM22 ML9S |
2.5Gbps DWDM InGaAsP DFB-LASER DIODE 高达2.5Gbps的DWDM激光器InGaAsP的激光二极管
1557 nm, LASER DIODE
1555 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SPLBG98 SPLBW81 SPLBS94 SPLBX83 SPLBX98 SPLBX94 SP |
Unmounted Laser Bar 40 W, 980 nm
Unmounted Laser Bar 20 W, 808 nm
Unmounted Laser Bar 100 W, qcw
Unmounted Laser Bar 30 W, 830 nm
Unmounted Laser Bar 30 W, 980 nm
Unmounted Laser Bar 30 W, 940 nm
Unmounted Laser Bar 30 W, 808 nm
|
Infineon
|
| BL-BUBGE301 |
Chip material: AlGaInP/GaAs
|
BRIGHT LED ELECTRONICS CORP
|
