| PART |
Description |
Maker |
| K4T1G044QE |
1Gb E-die DDR2 SDRAM
|
Samsung semiconductor
|
| K4T1G084QM-ZCCC K4T1G084QM-ZCD5 K4T1G044QM-ZCCC K4 |
1Gb M-die DDR2 SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4B1G1646C |
1Gb C-die DDR3 SDRAM Specification
|
Samsung semiconductor
|
| K4T1G084QC K4T1G044QC |
1Gb C-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
| K4T1G084QQ |
(K4T1G044QQ - K4T1G164QQ) 1Gb A-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
| 408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
| K4H1G0838M-TC/LB0 K4H1G0838M-TC/LA2 K4H1G0838M-TC/ |
DIODE ZENER DUAL COMMON-CATHODE 300mW 43Vz 5mA-Izt 0.0698 0.1uA-Ir 32 SOT-23 3K/REEL
1Gb M-die DDR SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M312L5128MT0 M312L5128MT0-CA0 M312L5128MT0-CA2 M31 |
DDR SDRAM Registered Module ( TSOP-II ) 184pin Registered Module based on 1Gb M-die with 1,200mil Height & 72-bit ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M470T6464AZ3-CLE6_D5_CC M470T5669AZ0-CLE6/D5/CC M4 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC
|
Samsung semiconductor
|
| WV3EG265M72EFSU262D4S WV3EG265M72EFSU265D4SG |
1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA 1GB 2x64Mx72 DDR内存，无缓冲，锁相环，FBGA封装
|
Square D by Schneider Electric
Diodes, Inc.
|
