| PART |
Description |
Maker |
| ST16CF54LEVELB |
4Mbit (512Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory(4M位低压单电源闪速存储器)
|
意法半导
|
| M27C405 4378 M27C405-90N6TR M27C405-100B1TR M27C40 |
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公512KB的存储器
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公12KB的存储器
Aluminum Electrolytic Radial Lead 5mm Length Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 6.3x5 mm; Packaging: Bulk 4兆位× 8检察官办公12KB的存储器
From old datasheet system
4 Mbit (512Kb x 8) OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MPC2104P MPC2105P |
(MPC2104P / MPC2105P) 256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 256KB/512KB BurstRAM二级缓存模块为PowerPC制备/ CH旺平
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| MPC2105A MPC2106ASG66 MPC2105B |
(MPC2105x / MPC2106x) 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 128K X 72 CACHE TAG SRAM MODULE, 9 ns, DMA178
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 512KBMB的二级缓存模块BurstRAM为PowerPC制备/ CH旺平
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| M27C400 6674 M27C400-80XF6TR M27C400-100B1TR M27C4 |
AML42 Series, Solid State Indicator, Square, Compact Style, Lighted, 1 LED, Snap in panel mount 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM
From old datasheet system
|
Advanced Micro Devices, Inc.
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| FM22LD16 FM22LD16-55-BG |
4Mbit F-RAM Memory
|
Ramtron International Corporation
|
| LH28F400SUHT LH28F400SUHT-NC80 |
4Mbit(512Kbit x 8/256 Kbit x 16) 5V Single Voltage Flash Memory
4Mbit(512Kbit x 8,256 Kbit x 16) 5V Single Voltage Flash Memory
|
SHARP[Sharp Electrionic Components]
|
| ST230C16C0 |
IC: CONFIGURATION DEVICE 4MBIT, PACKAGE 8SOIC 1600V 410A型相位控制晶闸管采用TO - 200AA（甲，北辰）封装
|
International Rectifier, Corp.
|
| HMN5128DV-85 HMN5128DV-85I HMN5128DV-70 HMN5128DV- |
Non-Volatile SRAM MODULE 4Mbit (512K x 8-Bit),32Pin-DIP, 3.3V
|
Hanbit Electronics Co.,Ltd
|
| ES25P40 |
4Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface
|
Excel Semiconductor Inc...
|
| HMD1M4Z1 |
4Mbit(1Mx4bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design
|
Hanbit Electronics Co.,Ltd.
|
| ES25P40 |
4Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface
|
优先(苏州)半导体有限公
|
