PART |
Description |
Maker |
K6F4016R6EFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
K6F4016R6DFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
K6F4016V6CFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
AK535505 AKD5355 |
Low Power 16bit ツヒ ADC
|
Asahi Kasei Microsystems
|
CS5506-BSZ CS5508-BSZ |
VERY LOW POWER 16BIT AND 20 BIT A/D CONVERTERS
|
Cirrus Logic, Inc.
|
AK4554 |
Low Power & Small Package 16bit ツヒ CODEC
|
Asahi Kasei Microsystems Co.,Ltd
|
W964B6BBN70 W964B6BBN80E |
1M WORD X 16BIT LOW POWER PSEUDO SRAM 1M X 16 PSEUDO STATIC RAM, 65 ns, PBGA48
|
Winbond Electronics, Corp. WINBOND ELECTRONICS CORP
|
AK4641EN |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
A43L2616V-6PH A43L2616V-7PH |
Cycle time:6ns; 166MHz CL=3 access time:5.0ns 1M x 16bit x 4banks synchronous DRAM Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous DRAM
|
AMIC Technology
|
KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|