PART |
Description |
Maker |
S30MS512P25BAW000 S30MS512P25BAW003 S30MS512P25BFW |
32M X 16 FLASH 1.8V PROM, 25 ns, PBGA137 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit??Technology 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 128M X 8 FLASH 1.8V PROM, 25 ns, PBGA137 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit?/a> Technology 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology
|
SPANSION LLC Spansion, Inc.
|
MT41J128M8 128M8 MT41J256M4 MT41J64M16 |
1Gb: x4, x8, x16 DDR3 SDRAM
|
Micon Design Technology Corporation
|
K5N1229ACD-BQ12 |
512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash
|
Samsung semiconductor
|
IS46DR16320B-3DBLA2 IS46DR16320B-3DBLA1 IS46DR1632 |
512Mb (x8, x16) DDR2 SDRAM 512Mb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc Integrated Silicon Solution... Integrated Silicon Solu...
|
HYB18T256161BF-28 |
256-Mbit x16 DDR2 SDRAM
|
http://
|
HM62V16256CLBP-5 |
4 M SRAM (256-kword x16-bit) 四米的SRAM56 - KWord的x16位)
|
Renesas Electronics, Corp.
|
IDT728985 IDT728985DB IDT728985J IDT728985J8 IDT72 |
TSI-TDM Switches 256 x 256 Time Slot Interchange Digital Switch, 5.0V 256 x 256 TSI, 8 I/O at 2Mbps, Variable/Constant Delay, 5.0V
|
Integrated Device Technology IDT
|
HFDOM40MRXXX DOM40MR032 |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB,真正的IDE接口模式3.3 / 5.0V工作
|
Hanbit Electronics Co.,Ltd. Hanbit Electronics Co., Ltd.
|
DOM40S3R288 DOM40S3R080 |
40Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 40Pin盘模块Min.16MBMax.512MB,真IDE接口
|
Hanbit Electronics Co., Ltd.
|
W3EG264M72AFSR335D3XG |
1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL, FBGA 1GB 2x64Mx72 ECC的DDR SDRAM的注册瓦锁相环,FBGA封装
|
KEMET Corporation
|