| PART |
Description |
Maker |
| HYB18H1G321AF-10 HYB18H1G321AF-11 |
GDDR3 Graphics RAM 1-Gbit GDDR3 Graphics RAM
|
Qimonda AG
|
| HYB18H512321BF-08_10 HYB18H512321BF HYB18H512321BF |
512-Mbit GDDR3 Graphics RAM
|
Qimonda AG
http://
|
| HYB18H512321BF-08 HYB18H512321BF-10 |
512-Mbit GDDR3 Graphics RAM
|
Qimonda AG
|
| NAND04G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，4千兆位，8千兆112 Byte/1056字的页面.8V/3V，NAND闪存
|
STMicroelectronics N.V.
|
| V23832-R111-M101 V23832-R311-M101 V23832-R511-M101 |
PAROLI 2 Tx AC, 1.6 Gbit/s
Parallel Optical Links (PAROLI) - PAROLI?2 Tx AC, 1.6 Gbit/s, multistandard electrical interface
Parallel Optical Links (PAROLI) - PAROLI?2 Rx AC, 1.6 Gbit/s,
PAROLI 2 Tx AC/ 2.7 Gbit/s
PAROLI 2 Tx AC/ 1.25 Gbit/s
PAROLI 2 Tx AC/ 1.6 Gbit/s
|
Infineon Technologies AG
|
| MT41LC256K32D4 |
Synchronous Graphics RAM
|
Micron Technology
|
| NAND08GW3B2AN1E NAND08GW3B2AN1F NAND04GW3B2AN1E NA |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND01G-B |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
| NAND01BG-B NAND01GW3B2AN6 NAND01GR3B2AN6 NAND01GR3 |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| K4G323222M-PL70 K4G323222M-PL45 K4G323222M-PC45 K4 |
1M X 32 SYNCHRONOUS GRAPHICS RAM, 5.5 ns, PQFP100
1M X 32 SYNCHRONOUS GRAPHICS RAM, 4 ns, PQFP100
1M X 32 SYNCHRONOUS GRAPHICS RAM, 6 ns, PQFP100
1M X 32 SYNCHRONOUS GRAPHICS RAM, 4.5 ns, PQFP100
|
|
| V23838-M305-M56 |
Transceivers by Form-factor MSA - SFP Multimode 850 nm; 2.125/ 1.062 Gbit/s FC; 1.25 Gbit/s GBE; LC Connector
|
Infineon
|
| HYB18M1G16 HYB18M1G160BF-7.5 HYE18M1G161BF-7.5 HYE |
1-Gbit x16 DDR Mobile-RAM 64M X 16 DDR DRAM, 5.5 ns, PBGA60
|
Qimonda AG
http://
|
