| PART |
Description |
Maker |
| C052H103K1G5GA |
Ceramic, 200C, MoldedHighTemp, 0.01 uF, 10%, 100 V, C0G, High Temp, 200C, Radial Molded, Gold Termination, Industrial Grade, Lead Spacing = 5.08mm
|
Kemet Corporation
|
| C4540H273KHGWCT050 |
Ceramic, 200C, 200C-(CxxxxH), 0.027 uF, 10%, 1,500 V, 4540, C0G, SMD, MLCC, High Temperature, Pulse Discharge, Ultra-Stable, Low Loss
|
Kemet Corporation
|
| SUM110N10-09-E3 SUM110N10-09 |
TERMINAL
N-Channel 100-V (D-S) 200C MOSFET
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| SHD116046B SHD11604611 |
HERMETIC POWER SCHOTTKY RECTIFIER 200C Maximum Operation Temperature
|
Sensitron
|
| SHD117246B |
HERMETIC POWER SCHOTTKY RECTIFIER 200C Maximum Operation Temperature
|
Sensitron
|
| SHD115444 SHD115444B SHD11544411 |
HERMETIC POWER SCHOTTKY RECTIFIER 200C Maximum Operation Temperature
|
Sensitron
|
| SD175SC150A |
SILICON SCHOTTKY RECTIFIER DIE Ultra Low Reverse Leakage 200C Operating Temperature
|
Sensitron
|
| FW905 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
7 A, 20 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Sanyo Semicon Device
SANYO SEMICONDUCTOR CO LTD
|
| FDD8426H |
40V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench垄莽 MOSFET N-Channel: 40 V, 12 A, 12 m楼? P-Channel: -40 V, -10 A, 17 m楼?
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ
|
Fairchild Semiconductor
|
| FDS8926A |
Dual N-Channel Enhancement Mode Field Effect Transistor 5.5 A, 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FDS8936S |
Dual N-Channel Enhancement Mode Field Effect Transistor 5 A, 30 V, 0.04 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| FDS6990AS FDS6990AS_NL FDS6990ASNL |
Dual 30V N-Channel PowerTrench SyncFET 7500 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
|
