PART |
Description |
Maker |
MSM512200L-80SJ MSM512200L-60SJ MSM512200L-60TS-K |
1,048,576-Word X 2-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 1,048,576字2位动态随机存储器:快速页面模式型
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OKI SEMICONDUCTOR CO., LTD.
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AK5321024BW |
1,048,576 Word by 32 Bit CMOS Dynamic Random Access Memory 1,048,576 Word2位CMOS动态随机存取存储器
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Accutek Microcircuit, Corp.
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MSM531602E MSM531602E-XXGS-K MSM531602E-XXRS MSM53 |
1,048,576-Word X 16-Bit or 2,097,152-Word x 8-Bit MASKROM 1,048,576字16位或2097152字8MASKROM
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OKI SEMICONDUCTOR CO., LTD.
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IDT72V235L20PFI IDT72V225L20PF IDT72V225L20PFI IDT |
3.3 VOLT CMOS SyncFIFO 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18, and 4,096 x 18 3.3伏的CMOS SyncFIFO 256 × 1812 × 18,024 × 18,048 × 18,和4,096 × 18 3.3 VOLT CMOS SyncFIFO 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18, and 4,096 x 18 1K X 18 OTHER FIFO, 12 ns, PQFP64 3.3 VOLT CMOS SyncFIFO 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18, and 4,096 x 18 3.3伏的CMOS SyncFIFO 256 × 1812 × 181,024 × 18,048 × 18,和4,096 × 18 Dual retriggerable monostable multivibrator with reset 3.3伏的CMOS SyncFIFO 256 × 1812 × 18,024 × 18,048 × 18,和4,096 × 18 3.3 VOLT CMOS SyncFIFO 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18, and 4,096 x 18 256 X 18 OTHER FIFO, 10 ns, PQFP64 3.3 VOLT CMOS SyncFIFO 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18, and 4,096 x 18 1K X 18 OTHER FIFO, 10 ns, PQFP64
|
Integrated Device Technology, Inc.
|
MSM56V16800D MSM56V16800DH |
2-Bank?1,048,576-Word?8-Bit Synchronous Dynamic RAM(2缁??,048,576瀛??浣??姝ュ???AM) 2-Bank×1,048,576-Word×8-Bit Synchronous Dynamic RAM(2组,048,576字位同步动态RAM) 2-Bank x 1048576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI SEMICONDUCTOR CO., LTD. OKI electronic componets
|
GM71C18163CL-6 GM71C18163C GM71C18163CL-5 GM71C181 |
1,048,576 words x 16 bit CMOS DRAM, 60ns 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
HYNIX[Hynix Semiconductor]
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THM361020S-10 THM361020S-80 THM361020SG-10 THM3610 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 1048576 WORDS x 36 BIT DYNAMIC RAM MODULE 1,048,576 WORDS x 36 BIT DYNAMIC RAM MODULE 1/048/576 WORDS x 36 BIT DYNAMIC RAM MODULE
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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AM29LV800T AM29LV800T-100 AM29LV800T-120 AM29LV800 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory Am29LV800 - 8 Megabit (1.048.576 x 8-Bit/524.288 x 16-Bit) CMOS 3.0 Volt-only. Sectored Flash Memory 8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory 512K X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC SPANSION LLC
|
VG26S18165CJ-5 VG26V18165CJ-6 VG26VS18165C VG26S18 |
1,048,576 x 16 - Bit CMOS Dynamic RAM 1M X 16 EDO DRAM, 60 ns, PDSO42 1,048,576 x 16 - Bit CMOS Dynamic RAM 1M X 16 EDO DRAM, 50 ns, PDSO42 1/048/576 x 16 - Bit CMOS Dynamic RAM
|
Vanguard International ... Vanguard International Semiconductor, Corp.
|
ADR370 |
2.048 V Tiny Package Precision Reference
|
Analog Devices
|
GM71C4403ET-80 GM71C4403E GM71C4403E-60 GM71C4403E |
1,048,576 Words x Bit Organization
|
LG[LG Semicon Co.,Ltd.]
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