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CM15TF12E - TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 15A I(C)

CM15TF12E_1704793.PDF Datasheet


Part No.	CM15TF12E
Description	TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 600V V(BR)CES \| 15A I(C)
File Size	310.36K / 4 Page
Maker	N/A
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Full text search : TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 15A I(C)

Product Description search : TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 15A I(C)

Related Part Number

PART	Description	Maker
C67076-A2510-A67 BSM15GD60DN2 SIEMENSAG-BSM15GD60D	IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) 15 A, 600 V, N-CHANNEL IGBT	SIEMENS[Siemens Semiconductor Group] SIEMENS AG
X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9	:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt :SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage :SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2 RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm; Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8 IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,	http:// INTERSIL[Intersil Corporation] Intersil, Corp.
2MBI100J-060	TRANSISTOR IGBT POWER MODULE	Fuji Semiconductors
MG800J2YS50A	IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT	Toshiba Semiconductor
VDI125-12S4 VII125-12S4 VID125-12S4	TRANSISTOR \| IGBT POWER MODULE \| INDEPENDENT \| 1.2KV V(BR)CES \| 125A I(C) 晶体管\| IGBT功率模块\|独立\| 1.2KV五（巴西）国际消费电子展\| 125A条一（c TRANSISTOR \| IGBT POWER MODULE \| HALF BRIDGE \| 1.2KV V(BR)CES \| 125A I(C) 晶体管\| IGBT功率模块\|半桥\| 1.2KV五（巴西）国际消费电子展\| 125A条一（c	IXYS, Corp.
1MBI600LP060	TRANSISTOR \| IGBT POWER MODULE \| INDEPENDENT \| 600V V(BR)CES \| 600A I(C)
FZ1200R33KF2C FZ1200R33KF2C-B5	IGBT Power Module IGBT-Wechselrichter / IGBT-inverter	eupec GmbH
FS8R12KF	TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 1.2KV V(BR)CES \| 8A I(C) 晶体管\| IGBT功率模块\| 3 - PH值大桥\| 1.2KV五（巴西）国际消费电子展\| 8A条一（c	ECM Electronics, Ltd.
CM600E2Y34H	TRANSISTOR \| IGBT POWER MODULE \| INDEPENDENT \| 1.7KV V(BR)CES \| 600A I(C) 晶体管\| IGBT功率模块\|独立\| 1.7KV五（巴西）国际消费电子展\| 601余（丙）	Powerex, Inc.
CM100TF12E	TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 600V V(BR)CES \| 100A I(C) 晶体管\| IGBT功率模块\| 3 - PH值大桥\| 600V的五（巴西）国际消费电子展\| 100号A一（c	KOA Speer Electronics,Inc.
CM200DU12H	TRANSISTOR \| IGBT POWER MODULE \| HALF BRIDGE \| 600V V(BR)CES \| 200A I(C) 晶体管\| IGBT功率模块\|半桥\| 600V的五（巴西）国际消费电子展\| 200安培我（丙）	Powerex, Inc.
CM100DY24H	TRANSISTOR \| IGBT POWER MODULE \| HALF BRIDGE \| 1.2KV V(BR)CES \| 100A I(C) 晶体管\| IGBT功率模块\|半桥\| 1.2KV五（巴西）国际消费电子展\| 100号A一（c	Toshiba, Corp.

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