| PART |
Description |
Maker |
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| AM29F080B-75SC |
Flash Memory IC; Memory Size:8Mbit; Memory Configuration:1M x 8; Package/Case:44-SOIC; Supply Voltage:5V; Access Time, Tacc:75ns; Mounting Type:Surface Mount 1M X 8 FLASH 5V PROM, 70 ns, PDSO44
|
Spansion, Inc.
|
| W39V040A W39V040AQ W39V040AP |
3.3-Volt Flash
NVM > Flash> FWH/LPC Flash Memory
512K 】 8 CMOS FLASH MEMORY WITH LPC INTERFACE
|
Winbond Electronics
WINBOND[Winbond]
|
| CAT28F102 CAT28F102T14I-45T CAT28F102PI-45T CAT28F |
90ns 1M-bit CMOS flash memory
70ns 1M-bit CMOS flash memory
55ns 1M-bit CMOS flash memory
45ns 1M-bit CMOS flash memory
1 Megabit CMOS Flash Memory
|
Catalyst Semiconductor
http://
|
| S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| CAT28F002 CAT28F002PI-90BT CAT28F002NI-90BT CAT28F |
90ns 2M-bit CMOS boot block flash memory
150ns 2M-bit CMOS boot block flash memory
120ns 2M-bit CMOS boot block flash memory
2 Megabit CMOS Boot Block Flash Memory
High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
|
http://
CATALYST[Catalyst Semiconductor]
|
| EN29LV640U EN29LV640U-70R EN29LV641H EN29LV641H-70 |
64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory
|
Eon Silicon Solution Inc.
ETC
|
| LH28F160S5 LH28F160S5-L10 LH28F160S5-L70 LH28F160S |
LH28F160S5D-L70 16MBIT (2MB x 8/1MB x 16)Smart 5 Flash Memory
16-MBIT(2MBx8/MBx16)Smart 5 Flash MEMORY
16-MBIT (2MBx8/1MBx16) Smart 5 Flash MEMORY
|
SHARP[Sharp Electrionic Components]
|
| M5M29KE131BVP |
Memory>NOR type Flash Memory
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY Stacked-uMCP (micro Multi Chip Package)
|
Renesas Electronics Corporation
|
| MB84VA2000-10 MB84VA2001-10 MB84VA2000 |
(MB84VA2000 / MB84VA2001) 8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM
8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA48
|
Fujitsu Media Devices
Fujitsu, Ltd.
Fujitsu Component Limited.
|
| W25P40-VSNI W25P40-VSNIG W25P40 W25P20 W25P10-VSNI |
4 Mbit Uniform Sector, Serial Flash Memory 2M X 1 FLASH 2.7V PROM, PDSO8
4M X 1 FLASH 2.7V PROM, PDSO8 0.150 INCH, GREEN, PLASTIC, SOIC-8
1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 40MHZ SPI
|
Winbond Electronics, Corp.
|
| CAT28F512P-12T CAT28F512N-15T CAT28F512NA-12T CAT2 |
64K X 8 FLASH 12V PROM, 90 ns, PDSO32
512K-Bit CMOS Flash Memory
Bulk Erase Flash Memory, 512Kb
64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
http://
CATALYST[Catalyst Semiconductor]
|
