| PART |
Description |
Maker |
| BR24L32 BR24L32FV-W BR24L32FJ-W BR24L32F-W BR24L32 |
4k8 bit electrically erasable PROM
4k】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| IS25C64A-3ZLA1 IS25C32A IS25C32A_07 IS25C32A-2GI I |
32K-BIT/64K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI[Integrated Silicon Solution, Inc]
|
| BR24L08-W BR24L08F-W BR24L08FJ-W BR24L08FV-W BR24L |
1024×8 bit electrically erasable PROM
1024 bit electrically erasable PROM 1024位电可擦除可编程ROM
|
Rohm Co., Ltd.
Rohm CO.,LTD.
|
| IS93C66A-3PI IS93C56A-2PI IS93C56A-2PLI IS93C56A-2 |
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM
|
Integrated Silicon Solution, Inc
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| BR24L08-W07 |
1024×8 bit electrically erasable PROM
|
Rohm
|
| M58658P |
320-Bit Electrically Alterable ROM
|
Mitsubishi Electric
|
| M5G1400P |
1400 BIT ELECTRICALLY ALTERABLE ROM 1400位可变光盘电
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
