| PART |
Description |
Maker |
| MX29VL320MBMI-10G MX29VL320MBMI-10R MX29VL033MBTI- |
128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY 8M X 16 FLASH 3V PROM, 100 ns, PDSO56
128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY
|
MACRONIX INTERNATIONAL CO LTD
Macronix International Co., Ltd.
|
| MX29LV128DBTC-90Q MX29LV128D MX29LV128DBT2I-90Q MX |
128M-BIT [16M x 8/8M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
Macronix International
|
| MX29LA128MTTI-90R MX29LA128MB MX29LA128MBTC-10 MX2 |
128M-BIT SINGLE VOLTAGE 3V ONLY BOOT SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| MX29LA129ML |
128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY
|
Macronix International
|
| UPD23C128000BLGY-XXX-MJH UPD23C128000BLGX-XXX UPD2 |
128M-bit (16M-wordx8-bit/8M-wordx16-bit) Mask ROM
|
NEC
|
| UPD45128163G5-A75-9JF UPD45128841G5-A10B-9JF UPD45 |
128M-bit Synchronous DRAM 4-bank/ LVTTL
OSCILLATORS 100PPM -20 70 3.3V 4 18.432MHZ PD HCMOS 5X7MM 4PAD SMD 128兆位同步DRAM 4银行，LVTTL
128M-bit Synchronous DRAM 4-bank, LVTTL 128兆位同步DRAM 4银行，LVTTL
|
NEC Corp.
NEC, Corp.
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AD5310 AD5310BRM AD5310BRT AD5310BRM-REEL AD5310BR |
2.5 V to 5.5 V/ 230uA/ Parallel Interface Dual Voltage-Output 8-/10-/12-Bit DACs
2.7 V to 5.5 V, 140 A, Rail-to-Rail Voltage Output 10-Bit DAC
2.7 V to 5.5 V, 140 uA, Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23
2.7 V to 5.5 V/ 140 uA/ Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23
Lithium Battery; Voltage Rating:3.6V; Battery Terminals:Connector SERIAL INPUT LOADING, 6 us SETTLING TIME, 10-BIT DAC, PDSO8
2.7 V to 5.5 V. 140 uA. Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23 2.7伏至5.540微安。轨至轨电压输出10位DAC采用SOT - 23
2.7 V to 5.5 V, 140 µA, Rail-to-Rail Voltage Output 10-Bit DAC
2.5 V to 5.5 V/ 115 uA/ Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs
|
ANALOG DEVICES INC
AD[Analog Devices]
Analog Devices, Inc.
|
| MBM29QM12DH60PCN MBM29QM12DH MBM29QM12DH60 MBM29QM |
128M (8M X 16) BIT
|
FUJITSU[Fujitsu Media Devices Limited]
|
| AD5384BBC-5REEL7 AD5384BBC-3REEL7 AD5384BBCZ-5 AD5 |
40-Channel, 3 V/5 V Single Supply,14-Bit, Serial Voltage-Output DAC; Package: CSPBGA (10x10x1.35); No of Pins: 100; Temperature Range: Industrial SERIAL INPUT LOADING, 8 us SETTLING TIME, 14-BIT DAC, PBGA100
40-Channel, 3 V/5 V, Single-Supply, Serial, 14-Bit Voltage Output DAC
|
ANALOG DEVICES INC
Analog Devices, Inc.
http://
|
| K4S280832B |
128M-bit SDRAM
|
Samsung Electronics
|
| M37210M4-227SP M37210M4-218SP M37210M3-560SP M3721 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER for VOLTAGE SYNTHESIZER with ON-SCREEN DISPLAY CONTROLLER
SINGLE CHIP 8-BIT CMOS MICROCOMPUTER FOR VOLTAGE SYNTHESIZER
Single Chip 8-Bit CMOS MICROCOMPUTER for Voltage SYNTHESISER WITH OSD Controller
Single-chip 8-bit CMOS microcfomputer for voltage synthesizer with on-screen display controller.
|
Mitsubishi Electric Corporation
|
