| PART |
Description |
Maker |
| MX29LA129MLTI-90R MX29GL033MBMC-10G MX29GL033MBMC- |
128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| MX29VL033MBTI-90G MX29VL033MTMC-90R MX29VL033MBMI- |
128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY 128兆位单电V时仅均匀部门闪存
|
Macronix International Co., Ltd.
|
| MX29GL033MTTC-70G MX29GL033MBMC-90G MX29GL033MBMI- |
128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
|
Macronix International Co., Ltd.
http://
|
| K9K4G08U1M K9F2G16U0M K9F2G08U0M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K4G08U1M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
SAMSUNG
|
| K9F1G08Q0A K9F1G08U0A K9F1G08Q0M |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K2G08U0M K9K2G08U0M-YCB0 K9K2G16U0M-PCB0 K9K2G16 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K2G08U0M-F K9K2G08U0M-V K9K2G08Q0M-P K9K2G08Q0M- |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MC-4R256CPE6C-653 MC-4R256CPE6C-745 MC-4R256CPE6C- |
Direct Rambus?/a> DRAM RIMM?/a> Module 256M-BYTE (128M-WORD x 16-BIT)
Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 256M-BYTE (128M-WORD x 16-BIT)
|
http://
Elpida Memory
|
| MAX5234 MAX5234AEUB MAX5234BEUB MAX5234-MAX5235 MA |
Single-Supply 3V/5V / Voltage-Output / Dual / Precision 12-Bit DACs
Single-Supply 3V/5V, Voltage-Output, Dual, Precision 12-Bit DACs SERIAL INPUT LOADING, 10 us SETTLING TIME, 12-BIT DAC, PDSO10
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| MBM29QM12DH60PCN MBM29QM12DH MBM29QM12DH60 MBM29QM |
128M (8M X 16) BIT
|
FUJITSU[Fujitsu Media Devices Limited]
|
| PD45128163-SU PD45128163G5-A75SU-9JF PD45128163G5- |
128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range)
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) 128兆位同步DRAM 4银行，LVTTL水树（宽温度范围
|
Elpida Memory, Inc.
|
