| PART |
Description |
Maker |
| 2N7002BKW |
60 V, 310 mA N-channel Trench MOSFET 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
NXP Semiconductors N.V.
|
| VIM-310 |
VIM-310
|
Varitronix international limited
|
| RO2053 |
310.0 MHz SAW Resonator
|
RFM[RF Monolithics, Inc]
|
| PAK-I |
310 Ivy Glen Court
|
Electronic Theatre Controls, Inc.
|
| PAK-VI |
310 Ivy Glen Court
|
ETC[ETC]
|
| PAK-II |
310 Ivy Glen Court
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| CNX310056E4108 |
CNX 310 XXX CABLE ASSEMBLY
|
Visual Communications Company
|
| NX5330SA NX5330SA-AZ |
1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS
|
California Eastern Labs
|
| 2N7002PT115 2N7002PT |
60 V, 310 mA N-channel Trench MOSFET
Logic-level compatible
|
NXP Semiconductors N.V.
|
| NX5321 NX5321EK-AZ NX5321EH-AZ |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| NX5315EH_06 NX5315EH NX5315EH-AZ NX5315EH06 |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
CEL[California Eastern Labs]
|
| NX6309GH NX6309GH-15 |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
