| PART |
Description |
Maker |
| BR24L01AF-W BR24L01AFV-W BR24L01AFVM-W BR24L01 BR2 |
1288 bit electrically erasable PROM
128】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| 24LC32AX 24AA32A 24LC32AT-I_SM 24LC32AT-I_SMG 24LC |
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I<SUP>2</SUP>C™ compatible 2-wire serial ...
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C™ compatible 2-wire serial interface bus. The 24AA32A features a page-write capability of up to 32 bytes of data and is capable of both r
32K I2C Serial EEPROM
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C™ compatible 2-wire serial ...
32KIC Serial EEPROM
32K 1.8V I2C Serial EEPROM
|
MICROCHIP[Microchip Technology]
|
| IS25C256 IS25C128 |
(IS25C128 / IS25C256) 128K-bit/ 256K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
|
| BR24L01A-W BR24L01AFJ-W BR24L01AFV-W BR24L01AFVM-W |
128×8 bit electrically erasable PROM
128 bit electrically erasable PROM 128位电可擦除可编程ROM
|
Rohm Co., Ltd.
Rohm CO.,LTD.
|
| IS93C66A-3PI IS93C56A-2PI IS93C56A-2PLI IS93C56A-2 |
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM
|
Integrated Silicon Solution, Inc
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| AM2864BE |
8K X 8-Bit Electrically EPROM
|
AMD
|
| BR24L16FVM-W BR24L16F-W BR24L16FV-W BR24L16FJ-W BR |
2k×8 bit electrically erasable PROM
|
Rohm
|
| 24C16B |
Note:This product is not recommended for new designs. Please consider 24LC16B instead.The 24C16B is an 8K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit with an I2C™ compatible 2-wire serial
|
Microchip
|
| M58655P |
1024-BIT ELECTRICALLY ALTERABLE ROM
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
