| PART |
Description |
Maker |
| S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| K9K1G08U0B K9K1G08B0B K9K1G08R0B |
128M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MX25L12835E MX25L12835EMI-10G MX25L12835EZNI-10G |
128M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
HIGH PERFORMANCE SERIAL FLASH SPECIFICATION
|
Macronix International
|
| MX28F128J3XCC-15 MX28F128J3 MX28F128J3RBC-15 MX28F |
128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY
|
ETC[ETC]
List of Unclassifed Manufacturers
|
| MBM29BS12DH15 MBM29BS12DH15PBT MBM29FS12DH15PBT |
BURST MODE FLASH MEMORY CMOS 128M (8M X 16) BIT
|
SPANSION[SPANSION]
|
| MX25L12855E |
128M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25L6465EMI10G MX25L12865EZNI10G |
64/128M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25L12845EZNI10G MX25L12845E14 MX25L12845EMI10G |
128M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MBM29XL12DF-70 MBM29XL12DF-80 |
PAGE MODE FLASH MEMORY CMOS 128M BIT 页面模式闪存的CMOS 128M的钻
|
Fujitsu, Ltd.
Fujitsu Component Limited.
|
| K9F1G08D0M K9F1G16D0M K9F1G08U0M-YCB00 |
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
128M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| ULS-2821R ULS-2803H ULS-2823H ULS-2822 ULS-2815H U |
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:128MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 高电压，大电流达林顿阵列
50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Allegro MicroSystems, Inc.
|
