| PART |
Description |
Maker |
| HN29V25611ABP |
256M AND Type Flash Memory
|
Hitachi
|
| HN29W25611T-50 |
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit)
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| K9K2G08U0M-FIB0 K9K2G08U0M-VCB0 K9K2G08U0M-VIB0 K9 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K9E2G08U0M K9E2G08U0M-F K9E2G08U0M-P K9E2G08U0M-V |
256M x 8 Bits NAND Flash Memory
|
Samsung Electronic
Samsung semiconductor
|
| S29GL128P90TFCR10 S29GL512P10TFIR20 S29GL256P90FAI |
128M X 1 FLASH 3V PROM, 90 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
512M X 1 FLASH 3V PROM, 100 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 256M X 1 FLASH 3V PROM, 90 ns, PBGA64
256M X 1 FLASH 3V PROM, 90 ns, PBGA64 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64
1G X 1 FLASH 3V PROM, 110 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
256M X 1 FLASH 3V PROM, 90 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 110 ns, PBGA64
1G X 1 FLASH 3V PROM, 110 ns, PBGA64 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 512M X 1 FLASH 3V PROM, 110 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 256M X 1 FLASH 3V PROM, 100 ns, PBGA64
128M X 1 FLASH 3V PROM, 100 ns, PBGA64
1G X 1 FLASH 3V PROM, 120 ns, PDSO56
1G X 1 FLASH 3V PROM, 130 ns, PDSO56
1G X 1 FLASH 3V PROM, 120 ns, PBGA64
|
Spansion, Inc.
SPANSION LLC
|
| ULS-2821R ULS-2803H ULS-2823H ULS-2822 ULS-2815H U |
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:128MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 高电压，大电流达林顿阵列
50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Allegro MicroSystems, Inc.
|
| K9F1G08R0A K9K2G08U1A K9F1G08U0A |
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| UNR2225 UNR2226 UNR2227 UN2225 UN2226 UN2227 |
Flash Memory IC; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-DIP; Supply Voltage Max:5.5V; Access Time, Tacc:120ns; Mounting
Silicon NPN epitaxial planar type
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| TE28F160B3T90 28F008B3 28F016B3 28F032B3 28F320B3 |
(TE28F Series) SMART 3 ADVANCED BOOT BLOCK 4-8-16-32-MBIT FLASH MEMORY FAMILY
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 3V PROM, 110 ns, PBGA48
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 2.7V PROM, 90 ns, PDSO48
RES 10K-OHM 2% 0.25W 100PPM MET-FILM AXIAL TR-13 R-MIL-PRF-39017 智能高级启动34 - - 6 - 2 - Mbit闪存家庭
TVS UNI-DIR 70V 400W SMA 智能高级启动3 - - 6 - 2 - Mbit闪存家庭
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 2 - Mbit闪存家庭
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 32 - Mbit闪存家庭
SMART 3 ADVANCED BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE, 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY
|
TE Connectivity, Ltd.
Intel, Corp.
Intel Corp.
Intel Corporation
|
| MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73
Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes
CONN, M HEADER ST 1X2 .230
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
|
