| PART |
Description |
Maker |
| V53C1256162VAUS7IPC V53C1256162VAUT8IPC V53C125616 |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 256Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16x 16
|
Electronic Theatre Controls, Inc.
|
| HYB25D256800BTL-5A HYB25D256160BT-5A HYB25D256800B |
256MBit Double Data Rata SDRAM 256Mbit SDRAM的双倍数据拉
|
Infineon Technologies AG
Infineon Technologies A...
|
| HYB25D256400BT HYB25D256800BC-7 HYB25D256400BT-7 H |
256Mbit (64Mx4) DDR200 (2-2-2) ？的256Mbit4Mx4）DDR200-2-2）？
256Mbit (64Mx4) DDR333 (2.5-3-3)
256Mbit (16Mx16) DDR200 (2-2-2)
256Mbit (32Mx8) DDR200 (2-2-2)
256Mbit (32Mx8) DDR266A (2-3-3)
256Mbit (64Mx4) DDR266A (2-3-3)
256Mb (64Mx4) FBGA DDR266A (2-3-3)
256-Mbit Double Data Rate SDRAM/ Die Rev. B
256-Mbit Double Data Rate SDRAM, Die Rev. B
|
http://
Infineon Technologies AG
Infineon Technologies A...
|
| HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M
SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC
4 Banks X 8M X 8Bit Synchronous DRAM
SDRAM - 256Mb
|
Hynix Semiconductor
|
| K4J55323QF-GC20 K4J55323QF-GC K4J55323QF-GC14 K4J5 |
256Mbit GDDR3 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| HY57V28820HCT-H HY57V28820HCLT-K |
x8 SDRAM
From old datasheet system
SDRAM,4X4MX8,CMOS,TSOP,54PIN,PLASTIC
|
Hynix Semiconductor
|
| K4S561632A K4S561632A-TC_L1H K4S561632A-TC_L1L K4S |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S641632H-TL60 K4S641632H-TL75 K4S640832H-TC75 K4 |
D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 64芯片与内存规格铅54 TSOP-II免费（符合RoHS
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 64芯片与内存规格铅54 TSOP-II免费（符合RoHS
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronics
|
| K4N56163QF-GC37 K4N56163QF-GC30 K4N56163QF-GC25 |
256Mbit gDDR2 SDRAM 56Mbit GDDR2 SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Panasonic, Corp.
Samsung Semiconductor Co., Ltd.
|
| K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S2 |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅SDRAM的规4 TSOP-II免费（符合RoHS
CAP 0.1UF 100V 10% X7R SMD-1206 TR-7-PL 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M368L6523DUS-LB3 M381L6523DUM-LCC M381L6523DUM-LB3 |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模84pin缓冲模块的发展为本的512Mb芯片4/72-bit非ECC /有铅ECC6 TSOP-II免费（符合RoHS
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
