| PART |
Description |
Maker |
| TLP250F |
TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE
|
Toshiba Corporation
Toshiba Semiconductor
|
| FG1800BH40 FG1800BH50 FG1000AL20 |
THYRISTOR|GTO|2KV V(DRM)|TO-200AF
THYRISTOR|GTO|2.5KV V(DRM)|TO-200AF
THYRISTOR|GTO|1KV V(DRM)|TO-200VAR56 晶闸管| GTO的| 1KV交五（DRM）的|00VAR56
|
Black Box, Corp.
|
| MSK4227D MSK4227G MSK4227S MSK4227U |
200 VOLT 20 AMP MOSFET H-BRIDGE WITH GATE DRIVE GATE DRIVE
|
M.S. Kennedy Corporation
|
| SMLE12EC6T SMLE12BC7T SMLE12BC7TT86 SMLE13BC8T SML |
SML-E1 Series
EXCELEDTM series Compact, Thin size (1.6×0.8mm, t=0.36mm)
|
Rohm
|
| 74LVXZ161284 74LVXZ161284MTX 74LVXZ161284MEX 74LVX |
2K, 258 X 8 or 128 X 16, SER EE, -40C to 85C, 8-TSSOP, TUBE
2K, 258 X 8 or 128 X 16, SER EE, -40C to 125C, 8-MSOP, T/R
BUS TRANSCEIVER|SINGLE|8-BIT|LVX-CMOS|SSOP|48PIN|PLASTIC
2K, 258 X 8 or 128 X 16, SER EE, -40C to 125C, 8-TSSOP, T/R
Low Voltage IEEE 161284 Translating Transceiver
|
Fairchild
|
| AP2322GN-HF AP2322GN-HF14 |
Capable of 1.8V gate drive, Simple Drive Requirement
|
Advanced Power Electronics Corp.
|
| AP2308GEN-HF AP2308GEN-HF-14 |
Capable of 2.5V Gate Drive, Lower Gate Charge
Fast Switching Performance
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| AP2346GN-HF AP2346GN-HF14 |
Capable of 1.8V Gate Drive, Lower Gate Charge
Fast Switching Performance
|
Advanced Power Electronics Corp.
|
| GCU35AA-120 |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
|
Mitsubishi Electric Corporation
|
| AP2324GN-HF |
Capable of 2.5V gate drive, Lower Gate Charge
|
Advanced Power Electronics Corp.
|
| AP9T19GJ |
Low Gate Charge, Capable of 2.5V gate drive
|
Advanced Power Electronics Corp.
|
| AP4434AGM-HF AP4434AGM-HF-14 |
Lower Gate Charge, Capable of 1.8V Gate Drive
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
