| PART |
Description |
Maker |
| HYM572A224ATRG-80 |
x72 EDO Page Mode DRAM Module x72 EDO公司页面模式内存模块
|
Vishay Intertechnology, Inc.
|
| HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO
x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|
| MT4LD164G-7BN MT4LD164G-6BN MT4LD164G-5BN MT4LDT16 |
x64 Burst EDO Page Mode DRAM Module X64的脉冲EDO页面模式内存模块
|
Cypress Semiconductor, Corp.
|
| AS4C4M4E1-50JC AS4C4M4E1-50TC AS4C4M4E1-50TI AS4C4 |
4M X 4 EDO DRAM, 60 ns, PDSO24
x4 EDO Page Mode DRAM
|
ALLIANCE SEMICONDUCTOR CORP
|
| IS41C82002-50TI IS41LV82002-50T IS41C82002-60T IS4 |
x8 EDO Page Mode DRAM x8 EDO公司页面模式的DRAM
2M X 8 EDO DRAM, 60 ns, PDSO28
2M X 8 EDO DRAM, 50 ns, PDSO28
|
Atmel, Corp.
INTEGRATED SILICON SOLUTION INC
|
| HB56AW873E-7A HB56AW873E-6A |
x72 Fast Page Mode DRAM Module x72快速页面模式内存模
|
Panasonic Industrial Solutions
|
| WPD32M72V-60MDC WPD32M72V-70MDC |
x72 Fast Page Mode DRAM Module x72快速页面模式内存模
|
SMSC, Corp.
|
| HB56AW272E-7B HB56AW272E-8B |
x72 Fast Page Mode DRAM Module x72快速页面模式内存模
|
SIEMENS AG
|
| IS41C85120-60K IS41C85120-60KI IS41C85120-35K IS41 |
512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 512K X 8 EDO DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| V53C16258L V53C16258SLT40 V53C16258SLT45 V53C16258 |
HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
256K X 16 EDO DRAM, 50 ns, PDSO40
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL-VITELIC
|
| GM71V65803AJ-5 |
x8 EDO Page Mode DRAM x8 EDO公司页面模式的DRAM
|
EPCOS AG
|
