| PART |
Description |
Maker |
| IDT70824L IDT70824L20G IDT70824L20GB IDT70824L20PF |
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM)
|
IDT
Integrated Device Technology
|
| LXT386LE LXT386 LXT386BE |
Networking & Communications - Broadband & Access Products - te Carrier Access Components T1/E1 - Intel LXT386 Quad T1/E1/J1 Transceiver
|
Intel Corporation
|
| WM72016-6-DGTR |
16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access
|
Ramtron International Corporation
|
| MCM6810 MCM6810CP MCM6810CS MCM6810P MCM6810S |
1 MHz; V(cc/in): -0.3 to 7.0V; 450ns; 128 x 8-bit randon-access memory
128 8-bit Random-Access Memory
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| HB561008AR-20 HB561008A-20 HB561008B-12 HB561008B- |
x8 Fast Page Mode DRAM Module
262114-word x 8 bit dynamic random access memory module
26214-word x 8-bit dynamic random access memory module
262锛?14-word x 8-bit dynamic random access memory module
|
Hitachi,Ltd.
|
| 7106L-QM1-Y 7106G-QM1-Y 7106L-D40-T 7106G-R40-T 71 |
3 ? DIGIT, LCD DISPLAY, A/D CONVERTERS
1-CH PROPRIETARY METHOD ADC, PARALLEL ACCESS, PDSO40
1-CH PROPRIETARY METHOD ADC, PARALLEL ACCESS, PDIP40
|
UNISONIC TECHNOLOGIES CO LTD
|
| CS5012A-KP12 CS5012A-BP12 CS5012-BD7 CS5016-SE16B |
1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL/PARALLEL ACCESS, PDIP40 PLASTIC, DIP-40
1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL/PARALLEL ACCESS, CDIP40
1-CH 16-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL/PARALLEL ACCESS, CQCC44
|
Cirrus Logic, Inc.
CIRRUS LOGIC INC
|
| UM612 UM614 UM617 UM604 UM628 UM605 UM611 UM622 UM |
15 Watt DC-DC Converters
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Top Boot Block; Package/Case:56-TSOP; Memory
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:56-TSOP; Memory
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Top Boot Block; Package/Case:56-TSOP; Memory
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:56-TSOP; Memory
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:64-BGA; Memory
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory
|
List of Unclassifed Man...
List of Unclassifed Manufacturers
N.A.
Unisonic Technologies
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 5962-89518012X 5962-8951801RX 5962-89518012A |
1-CH 8-BIT FLASH METHOD ADC, PARALLEL ACCESS, CQCC20
1-CH 8-BIT FLASH METHOD ADC, PARALLEL ACCESS, CDIP20
High Speed, µP-Compatible, CMOS, 8-Bit Sampling ADC; Package: LCC:CER LEADLESS CHIP CARR; No of Pins: 20; Temperature Range: Military
|
ANALOG DEVICES INC
|
