| PART |
Description |
Maker |
| AS4DDR264M64PBG1R-5_ET AS4DDR264M64PBG1R-5_IT AS4D |
64Mx64 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit
|
Austin Semiconductor
|
| GES-1651 |
16 Gigabit Ethernet ports with 2 shared SFP slots 10/100/1000Mbps wire speed transmission and reception
|
Level One
|
| NS9360B-0-C177 DATA24 DATA25 DATA26 DATA27 DATA28 |
This table lists the key features of the NS7520
Figure 1 shows the NS7520 modules. Dashed lines indicate shared pins
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| IS61VPS102418A-250B2I IS61LPS102418A-200B2 IS61VPS |
256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
256Kx72,512Kx36,1024Kx18 18Mb SYNCHRONOUS PIPELINED,SINGLE CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc.
Integrated Silicon Solu...
|
| IDT71V25761 IDT71V25781 IDT71V25781S166PF IDT71V25 |
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.5 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.3 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PBGA119
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.5VI / O的流水线输出，脉冲计数器，单周期取消
|
Integrated Device Technology, Inc.
|
| IR2085SPBF IR2085S |
HIGH SPEED, 100V, SELF OSCILLATING 50% DUTY CYCLE, HALF-BRIDGE DRIVER 高速，100V的，自振0％的占空比，半桥驱动
HIGH SPEED/ 100V/ SELF OSCILLATING 50% DUTY CYCLE/ HALF-BRIDGE DRIVER
HIGH SPEED 100V SELF OSCILLATING 50% DUTY CYCLE HALF-BRIDGE DRIVER
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| CY7C1261V18 CY7C1261V18-300BZC CY7C1261V18-300BZI |
36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
36-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
| SWE622501 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| SWE28000 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| SWE230000 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| SWE62250 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
| SWE210000 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
