| PART |
Description |
Maker |
| HYB25D512160BC-6 HYB25D512800BC-6 |
512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60
512-Mbit Double-Data-Rate SDRAM 64M X 8 DDR DRAM, 0.7 ns, PBGA60
|
Qimonda AG
|
| W9412G6JH W9412G6JH-5 |
2M ?4 BANKS ?16 BITS DDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
|
Winbond
|
| W942504CH-75 |
DDR SDRAM (Double Data Rate)
|
Winbond Electronics
|
| MT46V16M16 |
Double Data Rate (DDR) SDRAM
|
Micron Technology
|
| MT46V64M16 MT46V128M8 MT46V256M4 |
DOUBLE DATA RATE (DDR) SDRAM
|
MICRON[Micron Technology]
|
| SAA32M4 SAA32M4YX6XR4TL SAA32M4YX6XV4TL SAA32MXXX |
DOUBLE DATA RATE (DDR) SDRAM
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| MT46V64M16 |
(MT46Vxxx) DOUBLE DATA RATE DDR SDRAM
|
Micron Technology
|
| K4D263238F K4D263238F-QC40 K4D263238F-QC50 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL
128Mbit DDR SDRAM
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| M13S128168A-5TG |
2M x 16 Bit x 4 Banks Double Data Rate SDRAM 8M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Elite Semiconductor Memory Technology, Inc.
|
| M65KG256AB8W8 |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
| H5MS5162EFR |
536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM)
|
Hynix Semiconductor
|
| EM423M3284LBA-8FE EM424M3284LBA-75FE EM424M3284LBA |
512Mb (4MBank2) Double DATA RATE SDRAM
512Mb (4MBank32) Double DATA RATE SDRAM
512Mb (4M4Bank2) Double DATA RATE SDRAM
|
Electronic Theatre Controls, Inc.
|
