| PART |
Description |
Maker |
| MGFC44V6472 |
6.4-7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC44V3642 |
3.6-4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC44V4450_98 MGFC44V4450 MGFC44V445098 |
4.4-5.0GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| LQP03TN4N7H04 LQP03TN5N1H04 AN26024A GRM33B30J104K |
Ultra small, Single Band LNA-IC for 2.4 GHz Band Applications
|
Panasonic Battery Group
|
| UPG2164T5N-E2-A UPG2164T5N-E2 UPG2164T5N |
DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN
|
CEL[California Eastern Labs]
|
| FMPA2151 |
2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| UPG2163T5N-E2-A UPG2163T5N-E2 UPG2163T5N |
SPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN
|
CEL[California Eastern Labs]
|
| SST13LP05-MLCF |
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module
|
SILICON STORAGE TECHNOLOGY INC
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| MAAMML0020 |
X -> Ka Band, Connectorised Tripler: 9 - 11 GHz -> 27 - 33 GHz
X -> Ka Band, Connectorised Tripler: 9 - 11 GHz -> 27 - 33 GHz
|
MACOM[Tyco Electronics]
|
| 5A-12S12 5A-12S15 5A-24S15 5A-24S12 5A-12S05 5A-12 |
6W-24W Wide Input DC-DC Converters
|
Broadband TelCom Power, Inc.
|
