| PART |
Description |
Maker |
| TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55257BFL-10L TC55257BFL-85 TC55257BPL-10 TC55257 |
85ns; V(dd/in): -0.3 to 7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM
(TC55257xxx) SILICON GATE CMOS 32768 WORD X 8 BIT STATIC RAM
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM 硅栅CMOS 32768字8位静态RAM
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| M5M5V108CFP-10HI M5M5V108CFP-10XI M5M5V108CFP-70HI |
1048576-bit (131072-word by 8-bit) CMOS static RAM
From old datasheet system
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
|
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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| CDP1821C CDP1821C3 FN2983 CDP1821C_3 CDP1821CD3 CD |
From old datasheet system
High-Reliability CMOS 1024-Word x 1-Bit Static RAM 高可靠性的CMOS 1024字1位静态存储器
High-Reliability CMOS 1024-Word x 1-Bit Static RAM 1K X 1 STANDARD SRAM, 255 ns, CDIP16
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| TC55VBM416AFTN55 |
1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
|
Toshiba Semiconductor
|
| M5M51008CFP M5M51008CKR-55 M5M51008CKR-55X M5M5100 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静RAM
Octal D-Type Transparent Latches With 3-State Outputs 20-SSOP -40 to 85
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| M5M5256CP-10LL M5M5256CP-10XL M5M5256CP-85LL M5M52 |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word8位）的CMOS静态RAM
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word位）的CMOS静态RAM
262144-bit (32768 x 8-bit) CMOS static RAM, 85ns
262144-bit (32768 x 8-bit) CMOS static RAM, 100ns
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| P4C187-20CMB P4C187L-25CMB P4C187L-45JMB P4C187-45 |
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 25 ns, CDIP22
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 45 ns, PDSO24
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 超高4K的1静态CMOS五羊
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 超高4K的1静CMOS五羊
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 15 ns, QCC22
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| MSM521209 |
131,072-Word ?9-Bit CMOS STATIC RAM(128k瀛??浣????AM)
From old datasheet system
131,072-Word x 9-Bit CMOS STATIC RAM
|
OKI SEMICONDUCTOR CO., LTD.
|
| M5M5V108DFP-70H M5M5V108DKV-70H M5M5V108DVP-70H M5 |
1048576-bit (131072-word by 8-bit) CMOS static RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word8位）的CMOS静态RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
