| PART |
Description |
Maker |
| HY57V561620HLT HY57V561620HT-H |
x16 SDRAM
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix
|
| IS42S16100-7T IS42S16100-6T IS42S16100-10T |
x16 SDRAM x16内存
|
Integrated Silicon Solution, Inc.
|
| HY5V26CLF-8I HY5V26CLF-PI HY5V26CLF-HI HY5V26CLF-S |
x16 SDRAM x16内存
|
Vishay Intertechnology, Inc.
|
| HY57V281620ALT-10 |
x16 SDRAM x16内存
|
Hynix Semiconductor, Inc.
|
| IS43DR81280B |
1Gb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| MT47H32M16CC3B |
512Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| VG3617161BT |
x16 CMOS SDRAM
From old datasheet system
|
VSI
|
| W981616AH-8 W981616AH-7 |
x16 SDRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
x16 SDRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
|
Winbond Electronics, Corp.
|
| K4X56163PE-LG K4X56163PE K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| MT46V64M8 MT46V64M8P-5BF MT46V32M16 MT46V32M16P-6T |
Double Data Rate (DDR) SDRAM
512Mb: x4, x8, x16 Double Data Rate (DDR) SDRAM SDRAM Features
512Mb: x4, x8, x16 Double Data Rate SDRAM Features
|
Alliance Semiconductor ...
Micron Technology
|
