PART |
Description |
Maker |
HT83F02 |
External Voice Memory Flash MCU
|
Holtek Semiconductor Inc
|
MSM9893L |
4M-bit Serial Voice Flash Memory
|
OKI[OKI electronic componets]
|
LPC2478FET208551 LPC247808 |
Single-chip 16-bit/32-bit micro; 512 kB flash, Ethernet, CAN, LCD, USB 2.0 device/host/OTG, external memory interface, SOT950-1 (TFBGA208), Tray Dry Pack, Bakeable, Single 32-BIT, FLASH, 72 MHz, RISC MICROCONTROLLER, PBGA208
|
NXP Semiconductors N.V.
|
ATMEGA8515 ATMEGA8515L |
8-Kbyte self-programming Flash Program Memory, 544 Byte internal up to 64 Kbyte external SRAM, 512 Byte EEPROM. Up to 16 MIPS throughput at 16 Mhz. 8-Kbyte self-programming Flash Program Memory, 544 Byte internal up to 64 Kbyte external SRAM, 512 Byte EEPROM. Up to 8 MIPS throughput at 8 Mhz. 3 Volt Operation
|
Atmel
|
LPC2292FBD144 |
16-32-bit ARM microcontrollers; 256 kB ISP-IAP flash with CAN, 10-bit ADC and external memory interface
|
NXP Semiconductors N.V.
|
AM29F080B-75SC |
Flash Memory IC; Memory Size:8Mbit; Memory Configuration:1M x 8; Package/Case:44-SOIC; Supply Voltage:5V; Access Time, Tacc:75ns; Mounting Type:Surface Mount 1M X 8 FLASH 5V PROM, 70 ns, PDSO44
|
Spansion, Inc.
|
LPC247811 |
Single-chip 16-bit/32-bit micro; 512 kB flash, Ethernet, CAN, LCD, USB 2.0 device/host/OTG, external memory interface
|
NXP Semiconductors
|
AM29F032B-75 AM29F032B-90EF |
32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:32Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes 4M X 8 FLASH 5V PROM, 90 ns, PDSO40
|
Spansion, Inc.
|
W39V040A W39V040AQ W39V040AP |
3.3-Volt Flash NVM > Flash> FWH/LPC Flash Memory 512K 】 8 CMOS FLASH MEMORY WITH LPC INTERFACE
|
Winbond Electronics WINBOND[Winbond]
|
S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 2M X 16 FLASH 3V PROM, 100 ns, PBGA56 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc. SPANSION LLC
|
TE28F640J3 TE28F256J3 TE28F320J3C-110 TE28F128J3A- |
8M X 16 FLASH 2.7V PROM, 120 ns, PDSO56 Intel StrataFlash Memory (J3) Strata Flash Memory 256M 256M Strata Flash Memory
|
NUMONYX Intel Corporation
|
AM29LV160MB70RPCI AM29LV160MT85WAI AM29LV160MB90EI |
Flash Memory IC 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
|
Spansion, Inc. Advanced Micro Devices
|
|