| PART |
Description |
Maker |
| IDH20G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH05G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH16G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| MA4ZD03 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD) Silicon epitaxial planar type
|
Panasonic Semiconductor
|
| MSICSN05120CA MSICSN05120CAE3 MSICSN05120CC MSICSN |
SiC Schottky Diodes
|
Microsemi
|
| APT20SCD65K |
SiC Schottky Diodes
|
Microsemi
|
| SCS215AJ |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS206AJHR |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS208AGHR SCS209AGHR |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS212AJ |
SiC Schottky Barrier Diode
|
Rohm
|
| RJS6005TDPPEJ |
SiC Schottky Barrier Diode
|
Renesas Electronics Corporation
|
| SCS215AJTLL |
SiC Schottky Barrier Diode
|
ROHM
|
