| PART |
Description |
Maker |
| IDT70V9379L IDT70V9379L9PRF IDT70V9379L12PRF IDT70 |
32K x 18 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
HIGH-SPEED 3.3V 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
|
IDT[Integrated Device Technology]
|
| IDT709079L15PF IDT709079S15PF8 IDT709089S9PF IDT70 |
HIGH-SPEED 32K x 8 SYNCHRONOUS DUAL-PORT STATIC RAM 32K X 8 DUAL-PORT SRAM, 20 ns, PQFP100
64K x 8 Sync, Dual-Port RAM, PipeLined/Flow-Through
32K x 8 Sync, Dual-Port RAM, PipeLined/Flow-Through
|
Integrated Device Technology, Inc.
IDT
|
| MCM63P531 MCM63P531TQ9R MCM63P531TQ4.5 MCM63P531TQ |
32K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM 32K X 32 CACHE SRAM, 7 ns, PQFP100
32K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM 32K X 32 CACHE SRAM, 4.5 ns, PQFP100
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| CY7C1219H CY7C1219H-100AXC CY7C1219H-100AXI CY7C12 |
1-Mbit (32K x 36) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
| MT58L32L32D MT58L32L36D MT58L64L18D |
32K x 36,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器)
64K x 18, 3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器)
32K x 32,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，双循环取消选择，同步脉冲静态存储器) 32KX82,3.3 O的流水线，双氰胺SyncBurst的SRAM兆，3.3V的输输出，流水线式，双循环取消选择，同步脉冲静态存储器
|
Micron Technology, Inc.
Micrel Semiconductor, Inc.
|
| 70V9079_DS_70149 IDT70V9079S9PF IDT70V9079S9PF8 |
32K x 8 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
From old datasheet system
|
IDT
|
| IDT709379L IDT709379L9PF IDT709379L7PF IDT709379L1 |
x18 Dual-Port SRAM
HIGH-SPEED 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
|
IDT
|
| CY7C1382CV25-167AI CY7C1382CV25-200BZI CY7C1382CV2 |
512K x 36 pipelined SRAM, 167MHz
512K x 36/1M x 18 Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
TRANS DARL PNP 100V 8A TO-220FP 1M X 18 CACHE SRAM, 3.4 ns, PQFP100
512K x 36 pipelined SRAM, 225MHz
|
Cypress Semiconductor, Corp.
|
| CY7C271A-30PC CY7C271A-35WC CY7C271A CY7C271A-25JC |
32K x 8 Power Switched and Reprogrammable PROM 32K X 8 UVPROM, 35 ns, CDIP28
32K x 8 Power Switched and Reprogrammable PROM 32K X 8 OTPROM, 35 ns, PDIP28
Memory : PROMs
|
Cypress Semiconductor, Corp.
|
| IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 512K x 36 QDR II PipeLined SRAM
Storage, Cases
Tools, Applicator RoHS Compliant: NA
Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA
SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA
18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT
http://
Integrated Device Technology, Inc.
|
| HD6473042 HD6433042TF HD6433042VF HD6433042VTF HD6 |
IC TXRX CAN 24V LOW SPEED 16SOIC 32位微控制
IC SRL EE 32K 2.7V 8MAP
IC SRL EE 32K 1.8V 8MAP
IC SRL EE 32K 2.7V 8TSSOP
ABSOLUTE MAXIMUM RATINGS
|
Renesas Electronics, Corp.
List of Unclassifed Manufacturers
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