| PART |
Description |
Maker |
| THS123 |
HALL SENSOR GaAs ION IMPLANTED PLANAR TYPE HIGH STABILITY CONTROL DIGITAL TACHOMETER CRANK SHAFR POSITION SENSOR
|
TOSHIBA
|
| KSY13 KSY13E7502 KSY13-E7502 |
MAGNETIC FIELD SENSOR-HALL EFFECT, 0-100mT, 0.09-0.14V, RECTANGULAR, SURFACE MOUNT
GaAs Hall Sensor with high sensitivit...
|
Infineon Technologies AG
|
| KSY16 |
GaAs Hall Sensor on Cu-leadframe for ...
|
Infineon
|
| HAL560 HAL566 HAL560SF-K HAL566SF-K HAL560SF-A HAL |
Two-Wire Hall Effect Sensor Family 双线霍尔效应传感器系
Two-Wire Hall Effect Sensor Family MAGNETIC FIELD SENSOR-HALL EFFECT, 46-52mT, RECTANGULAR, THROUGH HOLE MOUNT
|
Micronas Semiconductor Holding AG
|
| AH1822-FT4G-7 AH1822-FU4G-7 |
MICROPOWER OMNIPOLAR HALL EFFECT SWITCH
MAGNETIC FIELD SENSOR-HALL EFFECT, 1-5.5mT, 0.30V, RECTANGULAR, SURFACE MOUNT GREEN, DFN3020H4-6
MICROPOWER OMNIPOLAR HALL-EFFECT SENSOR
|
Diodes, Inc.
Diodes Inc.
Diodes Incorporated
|
| CFY25-20 CFY25-17 CFY25-23 Q62703-F107 Q62703-F106 |
Advanced PFC/PWM Combination Controllers 20-SOIC -40 to 105
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) 砷化镓场效应管（低噪声高增益对于前端放大器离子注入平面结构全部镀金）
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
|
SIEMENS AG
|
| HAL505SF-E |
IC HALL EFFECT SENSOR SOT-89B MAGNETIC FIELD SENSOR-HALL EFFECT, -17-17mT, 0.13-0.28V, RECTANGULAR, SURFACE MOUNT
|
Micronas Semiconductor Holding AG
|
| 55075-00-01-A 55075-00-01-C 55075-00-01-D 55075-00 |
MAGNETIC FIELD SENSOR-HALL EFFECT, 20mA, CYLINDRICAL
Geartooth Hall Effect Sensor Features and Benefits
|
HAMLIN ELECTRONICS EUROPE LTD
HAMLIN Position and Movement Sensor Solutions
|
| LT140A LT140 |
Hall Voltage 160mV Thin-Type Package GaAs Hall Device
|
Sharp Electrionic Component...
SHARP[Sharp Electrionic Components]
Sharp Corporation
|
| ZMV831ATA ZMV831BTA ZV831 ZV831BV2TA ZMV832ATA ZMV |
SILICON 28V HYPERABRUPT VARACTOR DIODES
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8VHYPERABRUPT变容二极
25 Volt hyperabrupt varactor diode
SHELL, DSUB, 25, 90, BLK, POY, S (1011898)
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES UHF BAND, 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
BACKSHL, D-SUB, 9POS, MTL, NIPL, (914794) 22 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
28 V, silicon hyperabrupt varactor diode
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
|
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
