| PART |
Description |
Maker |
| THS123 |
HALL SENSOR GaAs ION IMPLANTED PLANAR TYPE HIGH STABILITY CONTROL DIGITAL TACHOMETER CRANK SHAFR POSITION SENSOR
|
TOSHIBA
|
| THS124 |
HALL SENSOR GaAs ION IMPLANTED PLANAR TYPE HIGH STABILITY CONTROL DIGITAL TACHOMETER CRANK SHAFR POSITION SENSOR
|
TOSHIBA
|
| 351HE0A1ZA 351HE1A1ZA 351HE2A1ZA 351HE3A1ZA 351HE0 |
1/2 mm)
Single Turn Bushing Mount Hall Effect Sensor in Size 09 (22.2 mm)
POSITION, ROTARY SENSOR-HALL EFFECT, 270deg ROHS COMPLIANT PACKAGE
POSITION, ROTARY SENSOR-HALL EFFECT, 360deg
POSITION, ROTARY SENSOR-HALL EFFECT, 90deg
POSITION, ROTARY SENSOR-HALL EFFECT, 180deg
|
Vishay Siliconix
Vishay Intertechnology, Inc.
VISHAY SPECTROL
|
| LT140SA LT140 |
Hall Voltage 160mV Thin-Type Package GaAs Hall Device
|
Sharp Electrionic Component...
SHARP[Sharp Electrionic Components]
Sharp Corporation
|
| Q62703-F108 Q62703-F106 CFY25 Q62703-F107 CFY25-17 |
From old datasheet system
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
|
SIEMENS[Siemens Semiconductor Group]
|
| FHS130 |
25mA 30V FH130 Hall Effect Latch S ensor On-chip Hall Sensor
|
First Components International
|
| IQS6624-300DNR IQS6624-301DNR IQS624 IQS6624-500DN |
Hall effect angle sensor:On-chip Hall plates
|
List of Unclassifed Man...
|
| US5781LSE US5781EUA US5781ESE US5781 US5781LUA |
MAGNETIC FIELD SENSOR-HALL EFFECT, 3.5-15mT, 0.50V, RECTANGULAR, SURFACE MOUNT
Unipolar Hall Switch - Medium Sensitivity
|
Melexis Microelectronic Systems
|
| ZMV831ATA ZMV831BTA ZV831 ZV831BV2TA ZMV832ATA ZMV |
SILICON 28V HYPERABRUPT VARACTOR DIODES
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8VHYPERABRUPT变容二极
25 Volt hyperabrupt varactor diode
SHELL, DSUB, 25, 90, BLK, POY, S (1011898)
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES UHF BAND, 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
BACKSHL, D-SUB, 9POS, MTL, NIPL, (914794) 22 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
28 V, silicon hyperabrupt varactor diode
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
|
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
| A3054SU A3054KU 3054 A3054 |
Multiplexed Two-Wire Hall Effect Sensor(多路复用2线霍尔效应传感器)
MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs
From old datasheet system
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| AH1751-WG-A-A AH1751-PG-7-A AH1751-PG-A-A AH1751-P |
MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, 300mV, RECTANGULAR, THROUGH HOLE MOUNT
HALL EFFECT LATCH
|
Diodes Inc.
Diodes Incorporated
|
| AH277AZ4-CG1 AH277AZ4-AE1 AH277AZ4-BG1 |
MAGNETIC FIELD SENSOR-HALL EFFECT, -10-10mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, TO-94, SIP-4
MAGNETIC FIELD SENSOR-HALL EFFECT, -5-5mT, RECTANGULAR, THROUGH HOLE MOUNT ROHS COMPLIANT, TO-94, SIP-4,
MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, RECTANGULAR, THROUGH HOLE MOUNT
|
BCD Semiconductor Manufacturing, Ltd.
BCD SEMICONDUCTOR MANUFACTURING LTD
|
