PART |
Description |
Maker |
FS150R17KE3G |
EconoPACK module with trench/fieldstop IGBT and EmCon3 diode
|
eupec GmbH
|
FS225R17KE3 |
EconoPACK module with trench/fieldstop IGBT and EmCon3 diode
|
eupec GmbH
|
FS300R17KE4 |
EconoPACK? module with trench/fieldstop IGBT4 and Emitter Controlled3 diode
|
Infineon Technologies AG
|
FS450R17KE4 |
EconoPACK module with trench/fieldstop IGBT4 and Emitter Controlled3 diode
|
Infineon Technologies AG
|
FS225R12KE4 |
EconoPACK B-series module with trench/fieldstop IGBT4 and optimized EmCon diode
|
Infineon Technologies AG
|
FD200R12PT4-B6 |
EconoPACK 4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTC
|
Infineon Technologies A...
|
FGA25N120ANTD |
1200V NPT-Trench IGBT Using Fairchild's proprietary trench design and advanced NPT technology 1200V NPT Trench IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
ISL9N304AP3 ISL9N304AS3ST ISL9N304AS3STL86Z |
75 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5m?/a> N-Channel Logic Level UltraFET Trench MOSFETs 30V/ 75A/ 4.5m N-CHANNEL LOGIC LEVEL ULTRAFET TRENCH MOSFETS 30V, 75A, 4.5Mз N-Channel Logic Level UltraFET R Trench MOSFETs 30V, 75A, 4.5mOhm
|
FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
|
CM50TU-24F |
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts Trench Gate Design Six IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors] Powerex, Inc.
|
FGD4536 FGD4536TM |
360V PDP Trench IGBT 360 V PDP Trench IGBT
|
Fairchild Semiconductor
|
BSS138PW |
60 V, 320 mA N-channel Trench MOSFET 60 V, 360 mA N-channel Trench MOSFET
|
NXP Semiconductors
|