PART |
Description |
Maker |
PC3SD21NTZ04 PC3SD21NTZBF PC3SD21NXZCF |
VDRM : 600V Zero cross type DIP 6pin Phototriac Coupler for triggering
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Sharp Electrionic Components
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PC3SH21YIPB PC3SH21YFZ |
1 CHANNEL TRIAC OUTPUT WITH ZERO CRSVR OPTOCOUPLER SMT, PLASTIC, DIP-4 VDRM : 600V, Reinforced insulation type Zero cross type DIP 4pin Phototriac Coupler for triggering
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Sharp Electronics, Corp. Sharp Electrionic Components
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PC4SD21NTZCF PC4SD21NTZDF PC4SD21NXZCF PC4SD21YXPD |
VDRM : 800V Zero cross type DIP 6pin Phototriac Coupler for triggering
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Sharp Microelectronics of the Americas Sharp Electrionic Components
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IRG4BC40U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
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International Rectifier
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IRG4BC20W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
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IRF[International Rectifier]
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IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 18A条一(c)|63AB INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度(VCES和\u003d 600V电压的Vce(on)典\u003d.4V,@和VGE \u003d 15V的,集成电路\u003d 18A条) INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A) 600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
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International Rectifier, Corp. IRF[International Rectifier]
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IRG4BC20FD IRG4BC20FDPBF |
600V Fast 1-8 kHz Copack IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
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International Rectifier IRF
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S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1) Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
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S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
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Hamamatsu Photonics
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IRG4BC30UD IRG4BC30UDPBF |
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
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IRF[International Rectifier]
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IRG4BC20KDS IRG4BC20KD-S IRG4BC20KD-STRL IRG4BC20K |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A) 绝缘栅双极型晶体管,超快软恢复二极管VCES和\u003d 600V电压的Vce(on)典\u003d 2.27V,@和VGE \u003d 15V的,集成电路\u003d 9.0,9.0 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V Vce(on)typ.=2.27V @Vge=15V Ic=9.0A) 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package
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International Rectifier, Corp. IRF[International Rectifier]
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