| PART |
Description |
Maker |
| 2SA2210 2SA2210-1E |
Bipolar Transistor -50V, -20A, Low VCE(sat) PNP TO-220F-3SG
|
ON Semiconductor
|
| 20ETS12STRR 20ETS08 20ETS08S 20ETS08STRL 20ETS08ST |
INPUT RECTIFIER DIODE
1200V 20A Std. Recovery Diode in a D2-Pakpackage
1200V 20A Std. Recovery Diode in a TO-220AC (2-Pin)package
20ETS12/20ETS12S
800V 20A Std. Recovery Diode in a D2-Pakpackage
800V 20A Std. Recovery Diode in a TO-220AC (2-Pin)package
From old datasheet system
SURFACE MOUNTABLE INPUT RECTIFIER DIODE
|
InternationalRectifier
IRF[International Rectifier]
|
| IRG4PH50UD IRG4PH50 |
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A)
|
IRF[International Rectifier]
|
| RJH1CM6DPQ-E0-15 |
1200V - 20A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH1CM6DPQ-E0 |
1200V - 20A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| NGTB20N120IHR |
IGBT 1200V 20A FS2-RC Induction Heating
|
ON Semiconductor
|
| NGTB20N120IHS |
IGBT 1200V 20A FS1 Induction Heating
|
ON Semiconductor
|
| SPA5551 SPA555N |
20A / 1000 - 1200V SiC SCHOTTKY SINGLE PHASE BRIDGE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| 2SC5585 |
Hig current. Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA
|
TY Semiconductor Co., Ltd
|
| 2SB1424 |
Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics.
|
TY Semiconductor Co., Ltd
|
| 2SD1615 |
World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V
|
TY Semiconductor Co., Ltd
|
