| PART |
Description |
Maker |
| M27V800 |
8Mbit (1Mb x8 or 512Kb x16) Low Voltage UV EPROM and OTP EPROM(8Mb低压UV EPROM和OTP EPROM)
|
意法半导
|
| M39832 M39832NE 6468 M39832-B12WNE1T M39832-B12WNE |
Single Chip 8 Mbit (1Mb x8 or 512Kb x16) Flash and 256 Kbit Parallel EEPROM Memory
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory
From old datasheet system
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29F800D |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 5V SUPPLY FLASH MEMORY
|
STMicroelectronics
|
| M29F800AB M29F800AT 6442 |
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)Single Supply Flash Memory
From old datasheet system
|
STMicro
|
| M27W801 -M27W801 |
8Mbit (1Mb x 8) Low Voltage OTP EPROM(8M位低压一次可编程 EPROM)
8Mbit (1Mb x 8) Low Voltage OTP EPROM(8M浣?????娆″?缂?? EPROM)
|
意法半导
|
| MPC2105C MPC2106CDG66 |
(MPC2105C / MPC2106C) 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 128K X 72 CACHE SRAM MODULE, 9 ns, PDMA178
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| MCM72F7ADG9 MCM72F6A MCM72F6ADG10 MCM72F6ADG12 MCM |
512KB and 1MB Synchronous Fast Static RAM Module
|
MOTOROLA[Motorola, Inc]
|
| M27W016-100B1T M27W016-100M1T M27W016-100N1T M27W0 |
16 Mbit 1Mb x16 3V Supply FlexibleROMTM Memory
16 Mbit 1Mb x16 3V Supply FlexibleROM Memory
|
STMicroelectronics
意法半导
ST Microelectronics
|
| M36W0R6030B0ZAQ M36W0R6030T0 M36W0R6030T0ZAQ M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
ST Microelectronics
|
| M27V801 |
8Mbit (1Mb x 8) Low Voltage UV EPROM and OTP EPROM(8M位低压可紫外擦除EPROM和一次可编程EPROM)
|
意法半导
|
| M27V400 M27V400-100B1TR M27V400-100B6TR M27V400-10 |
NND - 4 MBIT (512KB X8 OR 256KB X16) UV EPROM AND OTP EPROM
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
