| PART |
Description |
Maker |
| PH3134-10M |
Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100μs Pulse, 10% Duty
Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100楼矛s Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| PE8411 |
N FEMALE CIRCULATOR 2-4 GHz 10w
|
Pasternack Enterprises, Inc.
|
| MAAP-008509-MCH000 MAAP-008509-SMB004 MA08509D_1 M |
Amplifier, Power, 10W 8.5-10.5 GHz
|
MACOM[Tyco Electronics]
|
| PE8311 |
N FEMALE ISOLATOR 2-4 GHz 10w
|
Pasternack Enterprises, Inc.
|
| SMTR2425-11B40 |
2.4-2.5 GHz 10W Bi-Directional Power Amplifier
|
Stealth Microwave, Inc.
|
| RFHA3832 |
10W GaN Wide-Band Power Amplifier
|
RF Micro Devices
|
| MGFC40V3742A |
3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V7177 |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V7785 |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785B C407785B |
From old datasheet system
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
