| PART |
Description |
Maker |
| SFH415 SFH415_6 SFH416-R Q62702-P1136 Q62702-P1137 |
GaAs-IR-Lumineszenzdioden GaAsInfrared Emitters
From old datasheet system
GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| LD242 LD242-2 LD242-3 LD242E7800 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
| SFH4552 SFH495P Q62702-P5054 Q62703-Q7891 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Q62703-Q1031 LD274 Q62703-Q1820 LD274-2 LD274-3 Q6 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| FCI-H125G-GAAS-100 FCI-H250G-GAAS-100 |
(FCI-H125G-GAAS-100 / FCI-H250G-GAAS-100) GaAs Photodiodes
|
Laser Components
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CF739 Q62702-F1215 |
From old datasheet system
GaAs FET (N-channel dual-gate GaAs MES FET)
|
Siemens Semiconductor G...
Siemens Semiconductor Group
Infineon
SIEMENS AG
|
| PD-8150-100 |
GaAs PIN PHOTODIODES PIN Photodiode with Mini-Size TO Package GaAs PIN型光电二极管PIN光电二极管的迷你尺寸，包
|
Optoway Technology, Inc.
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
