PART |
Description |
Maker |
KSC5302DM |
High Voltage & High Speed Power Switch Application 2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126 High Voltage & High Speed Power Switch Application
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
MJW16212 ON2060 |
Power 10A 650V NPN POWER TRANSISTOR From old datasheet system High and Very High Resolution Monitors
|
ON Semiconductor http://
|
IRFBL3703 |
Synchronous Rectification in High Power High Frequency DC/DC Converters HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
EMC21L1004 EMC21L1004GN |
High Voltage - High Power GaN-HEMT Power Amplifier Module
|
EUDYNA[Eudyna Devices Inc]
|
2SD1313 E001105 |
NPN TRIPLE DIFFUSED TYPE (HIGH POWER AMPLIFIER, SWITCHING APPLICATIONS) From old datasheet system HIGH POWER AMPLIFIER APPLICATIONS HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
IPS401-05I-SO IPS401-05C-D IPS401-05C-SO IPS401-05 |
High Efficiency, High Power Factor, Universal High Brightness WHITE LED Controller
|
List of Unclassifed Manufacturers
|
MT5375-UV |
Dimension in mm High power, high-speed, narrow beam angle, high reliablitiy
|
Marktech Corporate
|
AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
IRS26072DSPBF |
The IRS26072D is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
|
International Rectifier
|
TA0012 |
New High Power, High Efficiency HBT GSM Power Amplifier
|
RFMD[RF Micro Devices]
|
FD1000FH-56 |
1000 A, 2800 V, SILICON, RECTIFIER DIODE HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
Mitsubishi Electric Semiconductor
|